Micro-arc oxidation controllable preparation technology for barium strontium titanate ferroelectric thin films with different Ba<2+>/Sr<2+> ratios

A technology of barium strontium titanate and ferroelectric thin film, which is applied in the field of micro-arc oxidation controllable preparation, to achieve the effect of simple preparation, accurate and controllable film composition, and high bonding strength

Inactive Publication Date: 2018-11-23
GUANGDONG POLYTECHNIC NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But so far, except for our team, there are no reports at home and abroad on the direct preparation of barium strontium titanate ferroelectric thin films by using micro-arc oxidation technology.

Method used

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  • Micro-arc oxidation controllable preparation technology for barium strontium titanate ferroelectric thin films with different Ba&lt;2+&gt;/Sr&lt;2+&gt; ratios
  • Micro-arc oxidation controllable preparation technology for barium strontium titanate ferroelectric thin films with different Ba&lt;2+&gt;/Sr&lt;2+&gt; ratios
  • Micro-arc oxidation controllable preparation technology for barium strontium titanate ferroelectric thin films with different Ba&lt;2+&gt;/Sr&lt;2+&gt; ratios

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] In-situ growth of barium strontium titanate ferroelectric thin film on commercially pure titanium TA2 specifically includes the following steps:

[0034] (1) Sample preparation: Cut the Ti plate into a substrate of 40*20*2mm, and grind the Ti substrate step by step with 180# to 1200# sandpaper until the surface is bright and smooth.

[0035] (2) Pre-treatment of the sample: Wash the polished Ti sheet in acetone and deionized water respectively, and dry it for later use.

[0036] (3) Electrolyte preparation: with 0.5mol / L Ba(OH) 2 and 0.5mol / L Sr(OH) 2 As the solute, use deionized water as the solvent to prepare 1L electrolyte. The prepared electrolyte was stirred on a magnetic heating stirrer for 30 minutes, the heating temperature was set at 60° C., and the rotation speed was 1500 r / min.

[0037] (4) Ferroelectric thin film preparation: connect the titanium sheet pretreated in steps (1) and (2) to the anode, and place it in the electrolyte solution in step (3), and ...

Embodiment 2

[0040] In this embodiment, except for the composition of the electrolyte, other features are the same as those in Embodiment 1.

[0041] The electrolyte composition is as follows: with 0.6mol / L Ba(OH) 2 and 0.4mol / L Sr(OH) 2 As the solute, use deionized water as the solvent to prepare 1L electrolyte.

[0042]Measured by XRD, the ferroelectric thin film of this embodiment is mainly composed of tetragonal phase Ba x Sr (1-X) TiO 3 , a very small amount of (Ba,Sr)CO 3 and TiO 2 Composition, such as Figure 4 shown. The Ti element in the figure is caused by the thin film layer, and the rays penetrate the film layer and hit the substrate.

Embodiment 3

[0044] In this embodiment, except for the composition of the electrolyte, other features are the same as those in Embodiment 1.

[0045] The electrolyte composition is as follows: with 0.8mol / L Ba(OH) 2 and 0.2mol / L Sr(OH) 2 As the solute, use deionized water as the solvent to prepare 1L electrolyte.

[0046] It is measured by XRD that the ferroelectric thin film of this embodiment is mainly composed of tetragonal phase Ba x Sr (1-X) TiO 3 , very little TiO 2 In addition to the composition, the existing form of carbonate is mainly BaCO 3 ,Such as Figure 4 shown.

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Abstract

The invention relates to a micro-arc oxidation controllable preparation technology for barium strontium titanate ferroelectric thin films with different Ba<2+> / Sr<2+> ratios. The microarc oxidation controllable preparation technology comprises the following steps that (1), a titanium substrate is subject to pretreatment; (2), the pretreated titanium substrate is connected to an anode, and then isplaced into a micro-arc oxidation electrolyte for micro-arc oxidation, the reaction is carried out for 5-10 minutes, then the barium strontium titanate ferroelectric thin film is generated on the surface of the titanium substrate, wherein the micro-arc oxidation electrolyte comprises the following components of 0.5-1.0 mol / L of barium hydroxide and 0-0.5 mol / L of strontium hydroxide; and (3), thetitanium substrate obtained after being treated in the step (2) is placed in distilled water for soaking for 1-2 hours, and finally, drying is carried out. According to the micro-arc oxidation controllable preparation technology, the barium strontium titanate ferroelectric thin films with the different Ba<2+> / Sr<2+> ratios can be grown on the Ti substrate in situ, the preparation process is simple, the microarc oxidation controllable preparation technology can be carried out at normal temperature, subsequent heat treatment is not needed, and the effects of being environment-friendly and pollution-free can be achieved.

Description

technical field [0001] The invention relates to the field of functional thin film materials, in particular to different Ba on the surface of a titanium substrate. 2+ / Sr 2+ Micro-arc oxidation controllable preparation method of barium strontium titanate thin film. Background technique [0002] Ba x Sr (1-x) TiO 3 (0≤x≤1)(BST) belongs to ABO 3 type composite perovskite ferroelectric material, is BaTiO 3 (BT) and SrTiO 3 (ST) infinite solid solution is widely used in DRAM, microwave tuner, Phase shifters, pyroelectric infrared sensors, H2 detectors, etc. are currently one of the hot spots in the research of new functional materials at home and abroad. [0003] At present, the most commonly used methods for preparing such thin films are magnetron sputtering, sol-gel method, pulsed laser deposition method, and metal-organic chemical vapor deposition. Although they have their own advantages and characteristics, they have their own limitations. These limitations are mainl...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): C25D11/26
CPCC25D11/26C25D11/026
Inventor王敏
OwnerGUANGDONG POLYTECHNIC NORMAL UNIV