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Method for growing barium strontium titanate ferroelectric film on surface of titanium substrate in situ, and microarc oxidation electrolyte

A technology of barium strontium titanate and ferroelectric thin film, which is applied in the direction of surface reaction electrolytic coating, electrolytic coating, coating, etc., can solve the problems of affecting the performance of the film, loose film surface, large roughness value, etc., and achieve good stability , easy to prepare and environmentally friendly

Inactive Publication Date: 2016-09-14
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since MAO film formation must rely on arc discharge, which leads to local high temperature, resulting in loose, uneven and large roughness on the surface of the film, this defect seriously affects the performance of the film

Method used

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  • Method for growing barium strontium titanate ferroelectric film on surface of titanium substrate in situ, and microarc oxidation electrolyte
  • Method for growing barium strontium titanate ferroelectric film on surface of titanium substrate in situ, and microarc oxidation electrolyte
  • Method for growing barium strontium titanate ferroelectric film on surface of titanium substrate in situ, and microarc oxidation electrolyte

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045]In-situ growth of barium strontium titanate ferroelectric thin film on commercially pure titanium TA2 specifically includes the following steps:

[0046] (1) Sample preparation: Cut the Ti plate into a substrate of 40*20*2mm, and grind the Ti substrate step by step with 180# to 1200# sandpaper until the surface is bright and smooth.

[0047] (2) Pre-treatment of the sample: Wash the polished Ti sheet in acetone and deionized water respectively, and dry it for later use.

[0048] (3) Electrolyte preparation: with 0.5mol / L Ba(OH) 2 +0.5mol / L Sr(OH) 2 +0.01mol / LPVP+0.01mol / L EDTA as the solute and deionized water as the solvent to prepare 1L electrolyte. The prepared electrolyte was stirred on a magnetic heating stirrer for 30 minutes, the heating temperature was set at 60° C., and the rotation speed was 1500 r / min.

[0049] (4) Ferroelectric thin film preparation: connect the titanium sheet pretreated by steps (1) and (2) to the anode, and place it in the electrolyte of...

Embodiment 2

[0052] In-situ growth of barium strontium titanate ferroelectric thin film on commercially pure titanium TA2 specifically includes the following steps:

[0053] (1) Sample preparation: Cut the Ti plate into a substrate of 40*20*2mm, and grind the Ti substrate step by step with 180# to 1200# sandpaper until the surface is bright and smooth.

[0054] (2) Pre-treatment of the sample: Wash the polished Ti sheet in acetone and deionized water respectively, and dry it for later use.

[0055] (3) Electrolyte preparation: the composition of the electrolyte is as follows: with 02mol / L Ba(OH) 2 +0.2mol / L Sr(OH) 2 +0.02mol / L PVP+0.05mol / L EDTA as solute and deionized water as solvent to prepare 1L electrolyte. The prepared electrolyte was stirred on a magnetic heating stirrer for 30 minutes, the heating temperature was set at 50° C., and the rotation speed was 1200 r / min.

[0056] (4) Ferroelectric film preparation: start the DC constant voltage pulse power supply, set the micro-arc o...

Embodiment 3

[0059] Except for the composition of the electrolyte solution, the other features of this embodiment are the same as those of the comparative example.

[0060] The electrolyte composition is as follows: with 0.8mol / L Ba(OH) 2 +0.8mol / L Sr(OH) 2 +0.06mol / L PVP+0.08mol / L EDTA as solute, deionized water as solvent, prepare 1L electrolyte.

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Abstract

The invention discloses a method for growing a barium strontium titanate ferroelectric film on the surface of a titanium substrate in situ. The method comprises the following steps: (1) pre-treating the titanium substrate; (2) connecting the pre-treated titanium substrate to an anode, placing the pre-treated titanium substrate in a microarc oxidation electrolyte and carrying out microarc oxidation, reacting for 5-20min, and generating the barium strontium titanate ferroelectric film on the surface of the titanium substrate. The microarc oxidation electrolyte comprises the following ingredients: 0.2-0.8mol / L of barium hydroxide, 0.2-0.8mol / L of strontium hydroxide, and electrolyte additives which comprise 0.01-0.06mol / L of PVP and 0.01-0.08mol / L of EDTA; and (3) placing the titanium substrate treated in the step (2) in distilled water and soaking for 1-2 hours, and finally drying. The method disclosed by the invention is capable of preparing the barium strontium titanate ferroelectric film with level and compact surface, and good ferroelectric properties, simple in preparation process, capable of being carried out at normal temperature, free from subsequent heat treatment, environment-friendly and pollution-free.

Description

technical field [0001] The invention relates to the field of functional thin film materials, in particular to a method for growing strontium barium titanate ferroelectric thin film in situ on the surface of a titanium substrate and a micro-arc oxidation electrolyte. Background technique [0002] Ferroelectric thin film materials are widely used as DRAM, microwave and piezoelectric devices, pyroelectric detectors, ferroelectric Application research on key materials of photovoltaic cells and other components. ABOs 3 type composite perovskite ferroelectric material Ba x Sr 1-x TiO 3 (BST) is BaTiO 3 (BT) and SrTiO 3 The infinite solid solution of (ST) has become one of the hot spots in the research of new functional materials at home and abroad because of its high dielectric constant, low dielectric loss, adjustable Curie temperature, and stable structure. [0003] At present, the most commonly used methods for preparing such thin films are magnetron sputtering, sol-gel ...

Claims

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Application Information

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IPC IPC(8): C25D11/26
CPCC25D11/024C25D11/26
Inventor 李文芳王敏张果戈
Owner SOUTH CHINA UNIV OF TECH
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