A kind of giant magneto-impedance effect magnetic sensitive sensor and preparation method

Abstract

The invention discloses a giant magneto-impedance effect magnetosensitive sensor and a preparation method thereof, comprising a magnetosensitive material, a three-dimensional miniature induction coil and a circuit part; glass-coated amorphous wire is used as the magnetosensitive material, and the ion beam sputtering etching technique is used on the glass The three-dimensional micro-induction coil is directly prepared on the coated amorphous wire, and the glass-coated amorphous wire with the three-dimensional micro-induction coil is wound to form a magnetic sensing unit. Several magnetic sensing units are combined and placed in the sensor matrix, and the lead out After the wires are integrated into the circuit part, the magnetic sensor is obtained, and the signal excitation of the magnetic sensor and the collection of the magnetic field induction signal are realized through the signal acquisition and processing circuit to measure the magnetic field change in the space. The magnetosensitive sensor prepared based on ion beam sputtering etching technology has the characteristics of high sensitivity, small size and high stability. It solves the problem of three-dimensional forming and precise assembly of micro induction coils, improves device sensitivity, high efficiency and stable performance. High yield rate.

Description

technical field [0001] The invention belongs to the technical field of sensors, and more specifically relates to a giant magneto-impedance effect magnetic sensor and a preparation method thereof. Background technique [0002] As we all know, the giant magneto-impedance (GMI) sensor is a new type of magnetic field sensor. Its principle is to use soft magnetic alloy materials to display the giant magneto-impedance effect in a small magnetic field, that is, when the magnetic field changes slightly, it will cause the soft magnetic material AC impedance changes dramatically. [0003] The giant magneto-impedance sensor is generally composed of a magnetic sensitive material, an induction coil and an excitation circuit system. Its structure is that the excitation circuit is connected to the induction coil, and the magnetic sensitive material is placed in the coil to sense the existence of the magnetic field. Among them, the selection of magnetic sensitive materials and the manufact...

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Problems solved by technology

[0004] The magnetosensitive materials such as the patent "Giant magneto-impedance effect sensor with meandering multi-turn structure (CN101644748)", "a self-biased giant magneto-impedance sensor probe and its preparation method (CN102707247A)" are thin films, and their sensitivity is lower than that of amorphous wires. The film preparation is easy to be uneven, resulting in unstable performance

[0005] The magnetosensitive material in the patent "Giant Magneto-Impedance Effect Two-dimensional Sensor (CN201020610144)" is an amorphous thin strip, and the amorphous thin strip and copper coil are integrated and prepared by micro-electromechanical technology (MEMS process), which indeed reduces the volume of the sensor. Sensitivity is improved, but in the MEMS process preparation process, the thin film needs to be insulated, and the insulating process for the amorphous thin strip will increase the cost, easily affect the quality of the device, and the mass production yield is low

[0006] In the patent "Spatial Three-axis Magnetic Sensor (CN102129052A)", the magnetic sensor is prepared by winding the enameled wire into an induction coil and placing it on the amorphous wire. The product prepared by this method is large in size, which affects the sensitivity of the sensor, and is not suitable for mass production in terms of technology.

[0007] Existing technologies that use integrated circuit manufacturing technology (IC technology) to produce biaxial magnetic field sensors, such as the patent "Single Package Design for Biaxial Magnetic Sensors (CN101120263)", the patent "Three-dimensional magneticdirection sensor, and magneto-impedance sensor element (US 7298140)" and the document "Anenhanced electronic topology aimed at improving the phase sensitivity of GMIsensors. (Measurement Science and Technology 2014)", the manufacturing method of the IC process is polluted, the efficiency is low, and the yield rate is not high

[0008] The patent "Magneto-impedance sensor element and its manufacturing method (CN102334040A)" announced a method of preparing a sensor by laying photoresist, exposure, development, etching and other processes. This method can indeed meet the needs of device miniaturization, but the process is too cumbersome , low efficiency, difficult to guarantee product stability

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