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Electro-static discharge (ESD) protection circuit

An electrostatic discharge protection and circuit technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of slow response speed of ESD protection circuits and poor ESD protection ability, and achieve the goal of improving anti-static performance and improving response speed. Effect

Inactive Publication Date: 2018-11-23
WUHAN XINXIN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, in the prior art, due to the high trigger voltage of the GGNMOS structure itself, the response speed of the ESD protection circuit is slow, and the ESD protection capability is not good.

Method used

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  • Electro-static discharge (ESD) protection circuit
  • Electro-static discharge (ESD) protection circuit

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Embodiment Construction

[0019] In order for those skilled in the art to better understand the solution of the present invention, the electrostatic discharge protection circuit of the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. According to the following description, the advantages and features of the present invention will be more clear. It should be noted that the drawings are all in a very simplified form and use inaccurate scales, and are only used to facilitate and clearly illustrate the embodiments of the present invention, and the embodiments of the present invention should not be considered limited to those shown in the drawings to show the specific shape of the region. For the sake of clarity, in all the drawings used to assist in explaining the embodiments of the present invention, in principle, the same components are marked with the same reference numerals, and repeated descriptions are omitted, but the ...

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Abstract

The invention discloses an electro-static discharge (ESD) protection circuit. The electro-static discharge protection circuit comprises an NMOS pipe, a capacitor and a resistor; a grid electrode of the NMOS pipe is connected to the power supply end through the capacitor and connected to the grounding end through the resistor; a source electrode of the NMOS pipe is connected with the power supply end; and the drain electrode of the NMOS pipe is connected with the grounding end. According to the electro-static discharge protection circuit, a trigging circuit of the capacitor and the resistor isadditionally arranged on the grid electrode of the NMOS pipe equivalently, the grid electrode voltage can be increased advantageously, the triggering voltage of the ESD protection circuit during the working state can be decreased advantageously, the response speed of the ESD protection circuit is increased, and thus the anti-static performance of the ESD protection circuit is improved greatly.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an electrostatic discharge protection circuit. Background technique [0002] Integrated circuits are easily damaged by static electricity. Generally, an Electro-Static discharge (ESD) protection circuit is designed in the input and output terminals of the circuit or power protection devices to prevent internal circuits from being damaged by static electricity. At present, GGNMOS (Gate Grounded NMOS, gate grounded N-type metal oxide semiconductor) is often used as an electrostatic discharge protection circuit. [0003] However, in the prior art, due to the high trigger voltage of the GGNMOS structure itself, the response speed of the ESD protection circuit is slow, and the ESD protection capability is not good. [0004] Therefore, in view of the above technical problems, it is necessary to provide an improved electrostatic discharge protection circuit. Contents of the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02
CPCH01L27/0266H01L27/0288H01L27/0296
Inventor 贺吉伟周俊
Owner WUHAN XINXIN SEMICON MFG CO LTD
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