Organic thin film transistor

Abstract

The invention discloses an organic thin film transistor, comprising a substrate, a source / drain layer, a first buffer layer, a semiconductor layer, a gate insulating layer, and a gate electrode, wherein the source / drain layer is located on the substrate and has a source region and a drain region; the first buffer layer is located between the source region and the drain region and covers at least part of the source region and at least part of the drain region; the semiconductor layer is located on the source / drain layer and the first buffer layer; the first buffer layer is located among the semiconductor layer, the source region, the drain region, and the substrate; the gate insulating layer covers the source / drain layer and the semiconductor layer; the gate electrode is located on the gateinsulating layer, and part of the gate insulating layer is located between the gate electrode and the semiconductor layer; and the first buffer layer may be used to fill the space between the sourceregion and the drain region to prevent the semiconductor layer from being formed on the wedge undercut structure of the source region and the drain region, so that the semiconductor layer has an eventhickness to improve the electrical stability of the organic thin film transistor.

Description

technical field [0001] The invention relates to an organic thin film transistor. Background technique [0002] Generally speaking, the source / drain layer of an organic thin film transistor is made of gold, silver or other metals that can react with a self-assembled monolayer (SAM), wherein the self-assembled monolayer is an organic film The semiconducting layer of the transistor. [0003] When making an organic thin film transistor, the source / drain layer is first patterned to form a source region and a drain region spaced apart, and then a semiconductor layer is coated on the source region and the drain region close to the distance to be connected to the source. In the space between the region and the drain region. However, limited by the material of the source / drain layer, after the source / drain layer is patterned, a taper undercut structure will be generated at a position close to the distance between the source region and the drain region. In this way, the semiconduct...

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Problems solved by technology

In other words, the non-uniform thickness of the semiconductor layer will adversely affect the electrical stability of the organic thin film transistor

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