32results about How to "Improve the stability of electrical properties" patented technology

The invention provides a fabrication method of a low-temperature polycrystalline silicon thin-film transistor (TFT) substrate structure and the low-temperature polycrystalline silicon TFT substrate structure. According to the fabrication method of the low-temperature polycrystalline silicon TFT substrate structure provided by the invention, patterns, which are consistent in law and size, of heat-conducting insulating layers are arranged below a buffer layer of a drive TFT region; the heat-conducting insulating layers absorb heat in the subsequent excimer laser annealing treatment process, so that the cooling speed of amorphous silicon is quickened to form crystal nucleus; the crystal nucleus gradually grows in the annealing process; the heat-conducting insulating layers have the patterns which are consistent in law and size, so that polycrystalline silicon grains formed by the drive TFT region have relatively good consistency; the grains are relatively large; and the electrical consistency of a drive TFT is ensured. According to the low-temperature polycrystalline silicon TFT substrate structure provided by the invention, the patterns, which are consistent in law and size, of the heat-conducting insulating layers are arranged below the buffer layer of the drive TFT region; the polycrystalline silicon grains of the drive TFT region are relatively good in consistency and relatively large; and the electrical consistency of the drive TFT is relatively good.

Provided are a mercury-free silver oxide button cell and a preparation method thereof. A preparation method of zinc gel of the cell comprises the steps that 1, an electrolyte is prepared, wherein potassium hydroxide and zinc oxide are added into water by mass, and the electrolyte is obtained after potassium hydroxide and zinc oxide are completely dissolved; 2, lead-free mercury-free zinc powder, polyacrylic acid, polyacrylate, indium hydroxide and indium oxide are put into a stirring tank of a zinc mixer by mass and stirred and mixed to be uniform, the zinc powder mixture is obtained, the electrolyte is added into the stirring tank slowly, the materials are stirred to be uniform, vacuumizing is conducted, and the zinc gel of the mercury-free silver oxide button cell is obtained. Compared with the prior art, the zinc gel of the mercury-free silver oxide button cell is formed by mixing and vacuum stirring the zinc powder mixture and the electrolyte, the formula of the raw materials is reasonable, the expansion rate of the obtained zinc gel is small, and the storing time of the prepared mercury-free silver oxide button cell is long.

The invention relates to a conductive carbon paste for a flexible pressure sensor, a preparation method thereof, and a pressure sensor. In terms of mass percentage, the raw material formula of the conductive carbon paste includes the following components: 1-25% of graphene, 0.04% of carbon nanotube ~1.5%, dispersant 0.001~1%, oleoresin 5~45%, thickener 1~10%, coupling agent 0.01~5%, first solvent 25~70% and second solvent 20~40%. The conductive carbon paste of the present invention adds graphene sheets and a small amount of carbon nanotubes to the resin system, and cooperates with the use of dispersants, coupling agents and plasticizers, so that the prepared conductive carbon paste has high sensitivity and high stability , low minimum detection limit, bending resistance, strong adhesion with flexible substrates, etc. Under the action of pressure, the conductive network formed by graphene and carbon nanotubes in the cured conductive carbon paste resin system changes, and the cured conductive carbon paste has increased resistance, high pressure sensitivity, and small pressure changes can be sensed.

The invention discloses an organic thin film transistor, comprising a substrate, a source / drain layer, a first buffer layer, a semiconductor layer, a gate insulating layer, and a gate electrode, wherein the source / drain layer is located on the substrate and has a source region and a drain region; the first buffer layer is located between the source region and the drain region and covers at least part of the source region and at least part of the drain region; the semiconductor layer is located on the source / drain layer and the first buffer layer; the first buffer layer is located among the semiconductor layer, the source region, the drain region, and the substrate; the gate insulating layer covers the source / drain layer and the semiconductor layer; the gate electrode is located on the gateinsulating layer, and part of the gate insulating layer is located between the gate electrode and the semiconductor layer; and the first buffer layer may be used to fill the space between the sourceregion and the drain region to prevent the semiconductor layer from being formed on the wedge undercut structure of the source region and the drain region, so that the semiconductor layer has an eventhickness to improve the electrical stability of the organic thin film transistor.