Thin film transistor, manufacturing method thereof and display panel

Abstract

The embodiment of the invention discloses a thin film transistor, a manufacturing method thereof and a display panel. The thin film transistor comprises a substrate, a gate, a gate insulation layer, asemiconductor layer, a doping layer and a source-drain, wherein the gate, the gate insulation layer, the semiconductor layer, the doping layer and the source-drain are sequentially formed on the substrate, and the semiconductor layer is used for absorbing a light ray with wavelength larger than 760 nanometers. In the thin film transistor disclosed by the embodiment of the invention, the light raycannot be absorbed by the semiconductor layer of the thin film transistor due to the characteristic that visible light is not absorbed by the semiconductor layer even the light ray radiates the semiconductor layer of the thin film transistor, the light ray cannot react with the visible light to generate a light leakage current, so that the leakage current of the thin film transistor cannot be increased. Compared with the prior art, the leakage current of the thin film transistor is reduced, the electrical performance stability of the thin film transistor is improved, and the power consumptionof the display panel also can be reduced when the thin film transistor is applied to the display panel.

Description

technical field [0001] Embodiments of the present invention relate to transistor technology, and in particular to a thin film transistor, a manufacturing method thereof, and a display panel. Background technique [0002] Thin-film transistors are the key components of display panels, which play a very important role in the performance of display panels. With the rapid development of electronic equipment, people require that the power consumption of electronic equipment should be as low as possible, and the battery life should be as high as possible. Therefore, Low power consumption of display panels in electronic equipment is also required. [0003] The display panel is provided with a thin-film transistor array substrate, but the leakage current of the thin-film transistors in the existing thin-film transistor array substrate is relatively large, and when light is irradiated on the thin-film transistor, photo-generated carriers will be generated, further increasing the dens...

AI Technical Summary

Problems solved by technology

[0003] The display panel is provided with a thin-film transistor array substrate, but the leakage current of the thin-film transistors in the existing thin-film transistor array substrate is relatively large, and when light is irradiated on the thin-film transistor, photo-generated carriers will be generated, further increasing the density of the thin-film transistor. Leakage current, resulting in large power consumption of the display panel, and poor stability of thin film transistors

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