Thin film transistor, array substrate, preparation method therefor, and display device

Abstract

Embodiments of the invention provide a thin film transistor, an array substrate, a preparation method therefor, and a display device, relating to the technical field of displays. Interface shortcomings of an insulation layer in contact with an active layer can be effectively overcome, and electric performance stability of the TFT (thin film transistor) in conduction is improved. The preparation method comprises: a step of forming active layers and insulation layers that are arranged layer by layer and in mutual contact on a substrate; the step of forming the insulation layers comprises: forming at least one layer of first insulation layer, wherein one layer of the at least one layer of the first insulation layer is in contact with the active layer; the step of forming the first insulation layer comprises: forming first insulation thin films formed by silicon oxide; repairing the first insulation thin films by a repairing source containing filling atoms to enable at least part of silicon dangling bond of the first insulation thin films to be combined with the filling atoms to form the first insulation layer. The preparation method is used for preparation of the thin film transistor, the array substrate comprising the thin film transistor as well as the display device.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor, an array substrate and a preparation method thereof, and a display device. Background technique [0002] Thin Film Transistor (Thin Film Transistor, TFT for short) has been widely used in flat panel display devices due to its good switching characteristics. A thin film transistor is generally composed of a gate, an active layer, a source and a drain; wherein, the source and the drain are respectively arranged at two ends of the active layer and are respectively in contact with the active layer. [0003] In a TFT, the active layer is always adjacent to an insulating layer; the material of the insulating layer is usually composed of silicon oxide, which will generate a large amount of silicon oxide at the interface with the active layer during the preparation process. Silicon dangling bonds, resulting in a large interface state density, making the active l...

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Problems solved by technology

[0003] In a TFT, the active layer is always adjacent to an insulating layer; the material of the insulating layer is usually composed of silicon oxide, which will generate a large amount of silicon oxide at the interface with the active layer during the preparation process. Silicon dangling bonds, resulting in a large interface state density, making the active layer carrier mobility decrease when the TFT is turned on, and the subthreshold voltage (V th ) swing increases, leakage current (I off ) increases and other defects, which reduce the stability of the electrical performance of the TFT when it is turned on

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