Thin film transistor and method of manufacturing same

Abstract

The embodiment of the present application discloses a thin film transistor and a method of manufacturing the same. In the thin film transistor, a gate layer, a gate insulating layer, a semiconductor layer, a source layer, a drain layer, and a passivation layer are sequentially formed on a substrate; the passivation layer is formed on the gate insulating layer, the source layer, the drain layer, and the semiconductor layer of a channel region, wherein the passivation layer corresponding to the channel region has a concave-convex surface, and in the above manner, the aperture ratio can be ensured, the light that is irradiated onto the channel region of the semiconductor layer of the thin film transistor can be reduced, which is advantageous for improving the stability of the thin film transistor.

Description

Technical field [0001] This application relates to the technical field of thin film transistors, in particular to a thin film transistor and a manufacturing method thereof. Background technique [0002] Thin Film Transistor (TFT, Thin Film Transistor) as a switching device is widely used in display panels, such as liquid crystal display panels, OLED display panels, etc., and its electrical stability is one of the key factors affecting the performance of the display panel. [0003] The semiconductor channel layer is a structural component of the TFT. It is easy to form electron-hole pairs after being exposed to light, thereby forming a current, which will adversely affect the electrical characteristics of the TFT and reduce the stability of the TFT. In the working environment of TFT, such as when applied to a liquid crystal display panel, the TFT will be irradiated by backlight and external light, which will have a certain impact on the electrical characteristics of the TFT. The pri...

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Problems solved by technology

[0003] The semiconductor channel layer is a structural part of the TFT. It is easy to form electron-hole pairs after being exposed to light, thereby forming a current, which will have a negative impact on the electrical properties of the TFT and reduce the stability of the TFT.

In the working environment of TFT, such as when it is applied to a liquid crystal display panel, the TFT will be irradiated by backlight and external light, and these lights will have a certain impact on the electrical characteristics of the TFT. The area of ​​the gate layer is used to block the backlight to reduce the light irradiating the TFT channel layer. However, increasing the area of ​​the gate layer will correspondingly sacrifice part of the area of ​​the pixel electrode and reduce the aperture ratio of the display panel.

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