Manufacturing method of array substrate, array substrate and display panel

Abstract

The invention discloses a manufacturing method of an array substrate, the array substrate and a display panel. The method comprises steps as follows: providing a substrate; sequentially arranging a first gate insulation layer, a film layer, a second gate insulation layer and a gate metal layer on the substrate; sequentially performing pattern etching on the gate metal layer and the second gate insulation layer, and detecting whether the film layer is etched in the etching process; if the film layer is etched, stopping etching to prevent the first gate insulation layer from being etched, wherein the material of the film layer is different from that of the second gate insulation layer. With the adoption of the scheme, the ion implantation uniformity can be improved, and the electric stability can be enhanced.

Description

technical field [0001] The present application relates to the field of display technology, in particular to a method for manufacturing an array substrate, an array substrate and a display panel. Background technique [0002] LTPS (Low Temperature Poly-silicon, low-temperature polysilicon) technology has gradually matured and is widely used in high-resolution products such as mobile phones. The current LTPS process is complicated, and the equipment is very precise and expensive. Therefore, in order to increase production capacity and reduce costs, it can only be saved through technological improvement mask to achieve. Re-etch technology can increase the production capacity of photoresist strippers, so many manufacturers are actively researching this technology in order to maximize production capacity. [0003] The inventors of the present application found in the long-term research and development that there are also some defects in the re-etching technology, mainly because ...

AI Technical Summary

Problems solved by technology

The inventors of the present application further found that due to sequential etching of metals and non-metals, it is difficult to take into account the uniformity of the gate line width and the etched gate insulating layer, and thus the uniformity of the remaining gate insulating layer is extremely difficult to control. Easy to cause electrical unevenness

Images