Method for improving precision of ion implantation machine

Abstract

The invention provides a method for improving the precision of an ion implantation machine. The method comprises the following steps: carrying out a square resistance Rs test by utilizing a reference machine; performing a square resistance sensitivity test on a verified machine; testing a square resistance difference value between the reference machine table and the verified machine under the same test condition, and matching the square resistance Rs of the verified machine with the square resistance Rs of the reference machine by performing dosage fine adjustment of ion implantation on the verified machine; defining a relative damage degree Q of ion implantation, obtaining a curve that the square resistance Rs value changes along with Q according to the relationship between the Q values of the reference machine and the verified machine and the square resistance Rs, and calculating the Rs and Q values corresponding to the intersection point of the curve; finely adjusting test conditions of the reference machine and the verified machine to obtain injection programs corresponding to curve intersection points Rs and Q values; and verifying whether the secondary ion mass spectrum SIMS results of the reference machine and the verified machine are matched or not by utilizing secondary ion mass spectrum analysis.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for improving the precision of an ion implantation machine. Background technique [0002] In the prior art, it is necessary to match the verified ion implantation machine with the reference machine. Usually, a sensitivity test is performed on the verified machine first, and then the actual difference in sheet resistance Rs of the two models is calculated (generally considered as the difference in Rs It comes from the difference in the actual dose of the two models), Rs matching can be achieved by modifying the dose trim, and finally sent to the secondary ion mass spectrometer (SIMS) to confirm whether the ion implantation form matches. But for some test programs (recipes), Rs matching can be achieved by modifying the dose trim, but the SIMS morphology does not match. [0003] Therefore, a new method needs to be proposed to solve the above-mentioned problems. Co...

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Problems solved by technology

[0004] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for improving the accuracy of the ion implantation machine, which is used to solve the problem of matching the sheet resistance of the ion implantation machine and the reference machine verified in the prior art. In some cases, the SIMS results of the two secondary ion mass spectrometers do not match

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