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Read data signal processing circuit for DDR (Double Data Rate) memory, and read data processing method

A signal processing circuit and data reading technology, applied in the direction of digital memory information, information storage, static memory, etc., can solve problems such as consumption, and achieve the effect of real-time work

Pending Publication Date: 2018-11-30
AMICRO SEMICON CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, based on the phase-locked loop PLL architecture or the delay-locked loop DLL architecture, there will be two problems. One is power consumption. Maintaining the phase-locked loop PLL or delay-locked loop DLL requires additional power consumption. The other is Speed ​​problem, phase-locked loop PLL circuit or delay phase-locked loop DLL circuit takes a long time to be stable, if for power consumption considerations, when the main control chip does not exchange data with the external DDR memory, it often needs to perform low In power consumption mode, the phase-locked loop PLL and delay-locked loop DLL need to be turned off. When the main control chip needs to resume access to the external DDR memory, the phase-locked loop PLL and delay-locked loop DLL functional modules resume normal operation The state also takes some time

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  • Read data signal processing circuit for DDR (Double Data Rate) memory, and read data processing method
  • Read data signal processing circuit for DDR (Double Data Rate) memory, and read data processing method
  • Read data signal processing circuit for DDR (Double Data Rate) memory, and read data processing method

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Embodiment Construction

[0029] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:

[0030] For a DDR memory connected to the SOC chip, according to the timing requirements of the read and write operations of the DDR memory, when the read operation is performed, the data pulse selection signal DQS and the data signal DQ need to be edge-aligned. The embodiment of the present invention provides a kind of read data signal processing circuit of DDR memory, such as Figure 4 with Figure 5 As shown, the sampling receiving module for receiving the data pulse selection signal DQS and the data signal DQ of the DDR memory outside the SOC chip and the pulse width for generating the digital control signal TD[n-1:0] with controllable delay Test module; wherein, the pulse width test module is used to output a high-level pulse signal CK_PULSE according to the clock signal CLK_X provided in the SOC chip, wherein the frequency of the clock signa...

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Abstract

The invention discloses a read data signal processing circuit for a DDR (Double Data Rate) memory, and a read data processing method. The read data signal processing circuit comprises a sampling and receiving module and a pulse width the testing module, wherein the sampling and receiving module is connected with the pulse width the sting module when a coding numerical value corresponding to a digital control signal TD [n-1:0] corresponds to the period of a data pulse selection signal DQS; and according to the digital control signal TD [n-1:0], 1 / 4 of the period of the data pulse selection signal DQS is additionally delayed for the data pulse selection signal DQS, so that a maximum time sampling window can be obtained when the data pulse selection signal DQS samples a data signal DQ. The technical scheme is controlled and processed by digital coding, and instant work can be realized.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit, in particular to a read data signal processing circuit and a read data processing method of a DDR memory. Background technique [0002] In SOC (System-on-a-Chip) applications, for a double-rate synchronous dynamic random access memory (Double Data Rate SDRAM, DDR SDRAM) connected to the chip, according to the timing requirements of the DDR SDRAM read operation, during the read operation , The data edge pulse and the data pulse edge are aligned, and the DDR SDRAM controller needs to sample data and latch the data in a short time, so as to realize sampling 2 data in two clock cycles. The prior art basically adopts a phase-locked loop (PLL) architecture or a delay-locked loop (DLL) architecture for clock delay design. [0003] In order to meet the timing requirements of the main control SOC receiving external DDR signals, a clock function module is designed inside the general main control chip ...

Claims

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Application Information

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IPC IPC(8): G11C11/409
CPCG11C11/409Y02D10/00
Inventor 杨秋平
Owner AMICRO SEMICON CORP
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