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A Method for On-Line Monitoring of the Shape of the Crystal Growth Interface in a Czochralski Single Crystal Furnace

A single crystal furnace and crystal growth technology, which is applied in the field of Czochralski single crystal growth, can solve the problem of difficult observation of the shape of the growth crystal interface

Active Publication Date: 2020-04-28
ZING SEMICON CORP
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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for on-line monitoring the shape of the crystal growth interface in a Czochralski single crystal furnace, so as to solve the technical problem that the shape of the crystal growth interface is difficult to observe during the crystal pulling process

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  • A Method for On-Line Monitoring of the Shape of the Crystal Growth Interface in a Czochralski Single Crystal Furnace
  • A Method for On-Line Monitoring of the Shape of the Crystal Growth Interface in a Czochralski Single Crystal Furnace
  • A Method for On-Line Monitoring of the Shape of the Crystal Growth Interface in a Czochralski Single Crystal Furnace

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Embodiment Construction

[0018] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0019] like figure 1 As shown, the present invention provides a method for on-line monitoring the shape of the crystal growth interface in a Czochralski single crystal furnace. The method includes: arranging two temperature monitoring points on the side wall of the high-temperature crystal 4, respectively the first temperature monitoring point 1 and the first temperature monitoring point 1. Second temperature monitoring point 2. In particular, the distance H between the first temperature monitoring point 1 and the second temperature monitoring point 2 and the triple point 3 is equal to 2-20 cm. During the entire crystal pulling process, the positions of the first temperature monitoring point 1 and the second temperature monitoring point 2 remain unchanged. The shape of the growth interface is generally described by the convexity h of the growth interface, s...

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Abstract

The invention discloses a method for on-line monitoring of crystal growing interface shape in a Czochralski crystal grower. Two temperature monitoring points are arranged on the side wall of the crystal, and two temperature monitoring points and triple points are equally spaced along the crystal growth direction. With the combination of temperature of the triple points, the change of the crystal growing interface shape is predicted. By measuring the temperature of the two monitoring points on the sidewall of the crystal through a temperature measuring device, the change of the crystal growinginterface shape in the crystal pulling process can be conveniently and accurately predicted. Thereby, guidance is provided for regulating the crystal growth process, and high-quality semiconductor crystals are finally obtained.

Description

technical field [0001] The invention belongs to the field of Czochralski single crystal growth, and in particular relates to a method for on-line monitoring the shape of the crystal growth interface in a Czochralski single crystal furnace. Background technique [0002] The Czochralski method is a single crystal growth method proposed by Polish scientist Jan Czochraski in 1918. This method was first applied to grow single crystal germanium and later to grow single crystal silicon. Due to its advantages of easy growth of single crystal with large diameter, no dislocation, and low point defect concentration, it is widely used in the field of growing large-scale semiconductor-grade single crystal silicon. [0003] During the crystal growth process, the shape of the crystal growth interface has a great influence on the final quality of the crystal. Vacancies and interstitial atom point defects in the crystal are generated near the growth interface, and the shape of the growth i...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/22
CPCC30B15/22
Inventor 刘立军丁俊岭
Owner ZING SEMICON CORP
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