A Method for On-Line Monitoring of the Shape of the Crystal Growth Interface in a Czochralski Single Crystal Furnace

A single crystal furnace and crystal growth technology, which is applied in the field of Czochralski single crystal growth, can solve the problem of difficult observation of the shape of the growth crystal interface
CN108950679BActive Publication Date: 2020-04-28ZING SEMICON CORP
10 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
ZING SEMICON CORP
Publication Date
2020-04-28

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a method for on-line monitoring of crystal growing interface shape in a Czochralski crystal grower. Two temperature monitoring points are arranged on the side wall of the crystal, and two temperature monitoring points and triple points are equally spaced along the crystal growth direction. With the combination of temperature of the triple points, the change of the crystal growing interface shape is predicted. By measuring the temperature of the two monitoring points on the sidewall of the crystal through a temperature measuring device, the change of the crystal growinginterface shape in the crystal pulling process can be conveniently and accurately predicted. Thereby, guidance is provided for regulating the crystal growth process, and high-quality semiconductor crystals are finally obtained.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention belongs to the field of Czochralski single crystal growth, and in particular relates to a method for on-line monitoring the shape of the crystal growth interface in a Czochralski single crystal furnace. Background technique

[0002] The Czochralski method is a single crystal growth method proposed by Polish scientist Jan Czochraski in 1918. This method was first applied to grow single crystal germanium and later to grow single crystal silicon. Due to its advantages of easy growth of single crystal with large diameter, no dislocation, and low point defect concentration, it is widely used in the field of growing large-scale semiconductor-grade single crystal silicon.

[0003] During the crystal growth process, the shape of the crystal growth interface has a great influence on the final quality of the crystal. Vacancies and interstitial atom point defects in the crystal are generated near the growth interface, and the shape of the growth i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More