LDMOS transistors including vertical gates with multiple dielectric sections, and associated methods

Abstract

A lateral double-diffused metal-oxide-semiconductor transistor includes a silicon semiconductor structure and a vertical gate. The vertical gate include a (a) gate conductor extending from a first outer surface of the silicon semiconductor structure into the silicon semiconductor structure; and (b) a gate dielectric layer including a least three dielectric sections. Each of the at least three dielectric sections separates the gate conductor from the silicon semiconductor structure by a respective separation distance, where each of the respective separation distances is different from each other of the respective separation distances.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS [0002] This application claims priority to US Patent Application No. 62 / 515,308, filed June 5, 2017, the entire contents of which are incorporated herein by reference. Background technique [0003] Metal Oxide Semiconductor Field Effect Transistors, commonly referred to as MOSFETs, are widely used in electronic devices, such as for switching or amplification. MOSFETs are capable of fast switching speeds, which makes them ideal for use in high frequency applications. In addition, MOSFETs are relatively simple to control because they are voltage-controlled devices rather than current-controlled devices. [0004] A lateral double-diffused metal-oxide-semiconductor field-effect transistor (often referred to as an LDMOS transistor) is a class of MOSFET in which the drain-source voltage is blocked primarily in the lateral direction within the semiconductor material of the transistor. LDMOS transistors are often combined with other c...

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However, due to the relatively low concentration of n-type dopants in n-well 124, current may encounter significant resistance in drift region 134

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