Comparison method and device for secondary ion mass spectrometry analysis curves

Abstract

The invention provides a comparison method and device for secondary ion mass spectrometry analysis curves. The comparison method and device is used for diagnosing whether ion implantation is abnormalor not. The method comprises the following steps of S1, finely adjusting a machine table; S2, in a first decision-making stage, carrying out ion implantation dose deviation self-checking by the machine table, if an ion implantation dose deviation is less than 1%, going to the step S3, and if the ion implantation dose deviation is larger than or equal to 1%, going to the step S1; S3, performing abnormal point detection and removal; S4, performing curve smoothing processing and performing model diagnosis; S5, calculating relevant non-parameter quantitative indexes and comparing the secondary ionmass spectrometry analysis curves according to the indexes; and S6, if the indexes meet a threshold value, determining that the current ion implantation is normal, and if the indexes do not meet thethreshold value, determining that the current ion implantation is abnormal, and going to the step S1. The problems that comparison parameters of the secondary ion mass spectrometry analysis curves areexcessively subjective and analysis of an ion implantation result is incomprehensive in the prior art are solved; and early detection is effectively realized and employees are guided to timely develop solutions, so that the influence of the deviation is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method and device for comparing curves of secondary ion mass spectrometry analysis. Background technique [0002] In recent years, secondary ion mass spectrometry (SMIS) has received more and more attention due to the rapidly growing demand for sub-nanometer depth resolution and higher sensitivity. SIMS bombards the surface of the sample with a high-energy primary ion beam, so that the surface of the sample absorbs energy and generates secondary ions. After analyzing these secondary ions with a mass analyzer, a spectrum of information about the surface of the sample can be obtained. Compared with other surface analysis techniques, such as scanning electron microscopy (SEM, Scanning Electron Microscopy), energy dispersive spectroscopy (EDS, Energy Dispersive Spectroscopy), energy dispersive electron spectroscopy (AES, Auger Electron Spectroscopy) and X-ray photoelectro...

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Problems solved by technology

[0018] The purpose of the present invention is to provide a method and device for comparing secondary ion mass spectrometry curves, which are used to diagnose whether there is abnormality in ion implantation, so as to solve the problem that the comparison parameters of secondary ion mass spectrometry curves in the prior art are too subjective, and the results of ion implantation Analyze incomplete problems, effectively realize early detection and guide practitioners to formulate solutions in time to reduce the impact of deviations

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