A kind of SB-tin dioxide-agnws/cbs-gns flexible thin-film solar cell and its preparation method

A technology of solar cells, sb-sno2-agnws, applied in the field of solar cells, can solve problems such as narrow application range, poor flexibility, and harsh preparation conditions of thin-film solar cells

Active Publication Date: 2020-02-04
HENAN UNIVERSITY
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a Sb-SnO with rich raw material reserves, full of innovation, superior photoelectric properties, good flexibility, wide application range, strong adaptability, safety and environmental protection 2 -silver nanowires / Cu 4 Bi 4 S 9 -graphenenanosheets (referred to as Sb-SnO 2 -AgNWs / CBS-GNs) thin-film solar cells and their preparation methods can not only avoid the high cost of silicon-based solar cells and the bottleneck of limited resource reserves, but also solve the problems of harsh preparation conditions, poor flexibility, and narrow application range of other thin-film solar cells.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of SB-tin dioxide-agnws/cbs-gns flexible thin-film solar cell and its preparation method
  • A kind of SB-tin dioxide-agnws/cbs-gns flexible thin-film solar cell and its preparation method
  • A kind of SB-tin dioxide-agnws/cbs-gns flexible thin-film solar cell and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Sb-SnO 2 -AgNWs / CBS-GNs flexible thin film solar cell preparation method, the process is as follows:

[0026] (1) The purchased poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid (PEDOT:PSS) was deposited (thickness about 15 nm) on the PET substrate to improve the contact between AgNWs and the substrate; 5 mg ultrafine AgNWs (diameter≤20 nm) dispersed into 5.5ml EMIMBF 4 and ultrapure water (volume ratio 1:10) in a mixed solution, and continuously stirred for 10 min to obtain a uniform dispersion of AgNWs (the scanning electron microscope picture is shown in figure 1 As shown in a, it shows that AgNWs in EMIMBF 4 The AgNWs solution was deposited on PEDOT:PSS by spin-coating deposition technology, and kept at 80 °C for 1 h to completely evaporate the water to obtain the AgNWs electrode (thickness 45 nm).

[0027] (2) Add appropriate amount of SnCl 4 ·5H 2 O was uniformly dispersed in isopropanol, and stirred continuously for 30 min to obtain a 0.05 M homogene...

Embodiment 2

[0031] For Sb-SnO 2 -AgNWs electron transport layer, gradually increase the mass percentage of AgNWs (in the form of Sb-SnO 2 and the total amount of AgNWs, the addition amount of AgNWs is 0.0, 0.2, 0.4, 0.6, 0.8, 1.0, 1.2, 1.4, 1.6 wt%), and the photoelectric conversion efficiency of the corresponding thin-film solar cells shows a trend of first increasing and then decreasing. Embodiment 1; The photoelectric conversion efficiency of the flexible solar cell varies with the mass percentage of AgNWs. The relationship curve is as follows Figure 4 (a) shown. It shows that the introduction of an appropriate amount (0.2~1.6wt%) of AgNWs can significantly improve the Sb-SnO 2 Electron transport characteristics, the photoelectric conversion efficiency increased from 10.62% to the maximum efficiency of 13.05% (AgNWs addition is 1.0wt%), improving the photoelectric conversion efficiency; (b) is Sb-SnO 2 - The photoelectric conversion efficiency retention rate of AgNWs / CBS-GNs varies...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a Sb-SnO2-AgNWs / CBS-GNs flexible thin film solar cell and preparation method thereof, and belongs to the field of solar cells. The method comprises the steps of: dispersing purchased ultrafine silver nanowires in a mixed solution of an ionic liquid (EMIMBF4) and ultrapure water (volume ratio 1:10), and performing stirring to obtain an AgNWs homogeneous dispersion of, and depositing AgNWs on a polybutylene terephthalate (PET) substrate to prepare a flexible electrode by a spin coating deposition technique; secondly, adding Sb (3 +) doping and AgNWs into the SnO 2 precursor solution at the same time, and obtaining an Sb-SnO2-AgNWs electron transport layer through spin coating deposition; finally, preparing CBS nanobelts by adding a proper amount of GNs (0.8-1.2 wt%) into a CBS nanobelt solution, depositing a CBS-GNs photosensitive layer, a NiOx hole transport layer and a metal counter electrode and assembling a thin film solar cell.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a Sb-SnO 2 -AgNWs / CBS-GNs flexible thin film solar cell and its preparation method. Background technique [0002] Solar cells are an important technical basis for large-scale utilization of solar energy into electrical energy. The development of solar cells is a "green" new technology that alleviates the contradiction between economic development, energy and the environment. Among them, crystalline silicon solar cells that use the photoelectric effect as their working mechanism have been developed The development is relatively mature, and the third-generation thin-film solar cells based on photochemical effects are still in the experimental research stage, but they have shown good development prospects and commercialization trends. In recent years, the photoelectric conversion efficiency of organic-inorganic hybrid perovskite solar cells has rapidly increased from the initia...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01G9/20
CPCH01G9/2022H01G9/2063Y02E10/542
Inventor 刘向阳牛晨顾玉宗
Owner HENAN UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products