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A kind of zto-agnws/cbs-gns flexible thin film solar cell and its preparation method

A technology for solar cells and flexible films, applied in the field of solar cells, can solve problems such as unsatisfactory stability, incompatibility with flexible substrates, and restrictions on large-scale production, so as to promote photo-generated hole extraction, improve internal electrical contact, and improve electronic The effect of transmission capacity

Active Publication Date: 2020-04-10
HENAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, crystalline Si-based solar cells have occupied 80-85% of the solar photovoltaic market, but high manufacturing costs limit their mass production
In recent years, the photoelectric conversion efficiency of organic-inorganic hybrid perovskite solar cells has rapidly increased from the initial 3.8% to more than 20.0%, but the stability is not very satisfactory. The electron transport layer used is mainly TiO 2 , ZnO, SnO 2 and Zn 2 SnO 4 etc. These metal oxides need to be annealed at high temperature to form a good crystalline state, and are mostly deposited on hard substrates such as indium tin oxide (ITO), fluorine-doped tin oxide (FTO) and aluminum-doped zinc oxide (AZO) On the surface, it is not compatible with flexible substrates, which limits its application range

Method used

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  • A kind of zto-agnws/cbs-gns flexible thin film solar cell and its preparation method
  • A kind of zto-agnws/cbs-gns flexible thin film solar cell and its preparation method
  • A kind of zto-agnws/cbs-gns flexible thin film solar cell and its preparation method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027]The preparation method of ZTO-AgNWs / CBS-GNs flexible thin film solar cell, the specific process is as follows:

[0028] (1) The purchased poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid (PEDOT:PSS) was deposited (thickness about 15 nm) on the PET substrate to improve the contact between AgNWs and the substrate; 5 mg ultrafine AgNWs (diameter≤20 nm) dispersed into 5.5ml EMIMBF 4 and ultrapure water (volume ratio 1:10) in a mixed solution, and continuously stirred for 10 min to obtain a uniform dispersion of AgNWs (the scanning electron microscope picture is shown in figure 1 As shown in a, it shows that AgNWs in EMIMBF 4 It has good dispersibility in a mixed solution with ultrapure water), and the AgNWs dispersion was deposited on PEDOT:PSS by spin-coating deposition technology, and kept at 80 °C for 1 h to completely evaporate the water to obtain an AgNWs electrode (thickness 45 nm).

[0029] (2) 12.8 mmol ZnCl 2 and 6.4 mmol SnCl 4 ·5H 2 O was dissolved i...

Embodiment 2

[0033] For the ZTO-AgNWs electron transport layer, the molar percentage of AgNWs was gradually increased (based on the total amount of ZTO and AgNWs, the addition amount of AgNWs was 0.0, 0.2, 0.4, 0.6, 0.8, 1.0, 1.2, 1.4, 1.6 mol%), corresponding to The photoelectric conversion efficiency of thin-film solar cells shows a trend of first increasing and then decreasing, and the others are the same as in Example 1; the photoelectric conversion efficiency of the flexible solar cell varies with the mass percentage of AgNWs. The relationship curve is as follows Figure 4 (a) shown. It shows that the introduction of an appropriate amount (0.2~1.6 mol%) of AgNWs can significantly improve the electron transport characteristics of ZTO, and the photoelectric conversion efficiency increases from 10.12% to the maximum efficiency of 12.20%, which improves the photoelectric conversion efficiency; (b) is ZTO-AgNWs / CBS-GNs with fold The photoelectric conversion efficiency retention rate of the...

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Abstract

To prepare ZTO-AgNWs / CBS-GNs flexible thin film solar cell, firstly, that sil nanowires are disper into a mixed solution of an ionic liquid (EMIMBF4) and ultrapure water, a homogeneous dispersion of AgNWs is obtained by stir, and AgNWs are deposited on a polybutylene terephthalate (PET) substrate by a spin coating deposition technology to prepare a flexible electrode; Secondly, ZTO nanoparticles were prepared by low-temperature solution method. The ZTO nanoparticles and AgNWs (0.2-1.6 mol%) were dispersed uniformly in the mixed solution of EMIMBF4 and ultrapure water (volume ratio 1: 5), and the ZTO nanoparticles were deposited by spin coating. AgNWs electron transport layer; At last, GNs (0.8 wt%) was introduced into CBS nanobelt solution to obtain CBS-GNs composite system, deposition ofCBS-GNs photosensitive layer, a NiO hole transport layer and a metal counter electrode are assemble into a thin film solar cell.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a ZTO-AgNWs / CBS-GNs flexible thin-film solar cell and a preparation method thereof. Background technique [0002] Solar energy is one of the most abundant clean, renewable energy sources with the least environmental impact. Solar cells are an important technical basis for large-scale utilization of solar energy into electrical energy. From the perspective of development, photovoltaic technology can be divided into Si-based solar cells, vapor-deposited semiconductor thin-film solar cells (CdTe and CIGS, etc.), and organic semiconductors, hybrid composite materials, and inorganic semiconductor solar cells based on solution processes. Among them, crystalline Si-based solar cells have occupied 80-85% of the solar photovoltaic market, but high manufacturing costs limit their mass production. In recent years, the photoelectric conversion efficiency of organic-inorgani...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0445H01L31/18
CPCH01L31/0445H01L31/18Y02E10/50Y02P70/50
Inventor 刘向阳牛晨刘新胜顾玉宗
Owner HENAN UNIVERSITY
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