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Gate structure of semiconductor device and manufacturing method thereof

A technology of gate structure and manufacturing method, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as reducing production efficiency and increasing process time

Active Publication Date: 2021-01-08
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the traditional method of manufacturing a split gate structure, the silicon oxide 20 at the bottom of the trench is grown by an oxidation process at a higher temperature and a longer time. If a thicker oxide layer needs to be formed on this basis, it will take a longer time. Time oxidation, thus increasing process time and reducing production efficiency

Method used

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  • Gate structure of semiconductor device and manufacturing method thereof
  • Gate structure of semiconductor device and manufacturing method thereof
  • Gate structure of semiconductor device and manufacturing method thereof

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Embodiment Construction

[0022] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. A preferred embodiment of the invention is shown in the drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the present invention will be thorough and complete.

[0023] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terms used herein in the description of the present invention are for the purpose of describing specific embodiments only, and are not intended to limit the present invention. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0024] The se...

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Abstract

The invention relates to a gate structure of a semiconductor device and a manufacturing method thereof. The gate structure comprises: a trench polysilicon gate extending downwardly from an edge of theplanar polysilicon gate to form an annular structure; A gate oxide layer disposed around the trench polysilicon gate; the bottom field oxygen arranged below the planar polysilicon gate and surroundedby the annular trench polysilicon gate. The trench polysilicon gate of the present invention is an annular structure surrounding the bottom field oxygen, which improves the gate density and optimizesthe electric field below the gate.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a gate structure of a semiconductor device, and also to a method for manufacturing the gate structure of a semiconductor device. Background technique [0002] Today's switching power supply operating frequency has been raised to a high frequency above 1MHz. Reduce the feedback capacitance (hereinafter referred to as C GD ) is a major research direction. The solution that has gained attention in recent years is to optimize the single trench gate (trench-gate) of a low-voltage VDMOS (vertical double-diffused metal-oxide-semiconductor field-effect transistor) device with a Shield in a buck-converter (step-down converter). -The split-gate structure of the Plate (shielding plate), which can significantly improve the reliability and switching characteristics of the device from the perspective of device structure and electricity. [0003] For the split gate, how to improve ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L21/336H01L29/78H01L29/423
CPCH01L21/28158H01L29/4236H01L29/66734H01L29/7813
Inventor 祁树坤
Owner CSMC TECH FAB2 CO LTD