A strained silicon nanofilm based on insulator

A nano-film, strained silicon technology, applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problem of low mobility of new insulating materials and achieve the effect of eliminating surface tension

Inactive Publication Date: 2019-01-15
久耀电子科技(江苏)有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The object of the present invention is to provide a strained silicon nano-film based on an insulator, to solve the problem that the mobility of existing insulating new materials proposed in the above-mentioned background technology is not high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0009] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the preparation process in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0010] The invention provides a technical solution: a strained silicon nano-film on insulator, including ultra-thin sSOI nano-film as the base material, research on strain adjustment of nano-film with suspended bridge structure, introduction of hydrofluoric acid vapor corrosion, strained silicon The technology enhances the carrier mobility, through the specific suspension bridge processing of the intrinsic silicon (without strain) on the top layer of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A strained silicon nanofilm based on insulator is disclosed, includes using ultra-thin sSOI nano film as base material, A study on strain regulation of nano-film with suspension bridge structure was carried out, Hydrofluoric acid vapor etching was introduced to enhance the carrier mobility, and the uniaxial strain of 4.48% suspended strained silicon nanowires was eliminated by using a hydrofluoricacid vapor etching system under different laser power and different structure sizes after a special suspension bridge-type fabrication of intrinsic silicon (without strain) on top of SOI. As that strained silicon nano film on the insulator is introduce into a hydrofluoric acid vapor etching system to eliminate surface tension, The uniaxial strain of 4.48% of the suspended silicon nanowires was obtained based on the theory of elastic deformation. The strain distribution and strain type of the suspended structure were simulated by the finite element software Comsol Multiphysics.

Description

technical field [0001] The invention relates to the technical field of new materials, in particular to a strained silicon nano-film based on an insulator. Background technique [0002] The existing method of reducing device size to improve transistor performance is increasingly limited by cost and technology, which limits the further development of Moore's Law. Strained silicon-on-insulator (sSOI) combines strained silicon technology and SOI technology, which has high mobility, is fully compatible with bulk silicon technology, and has the incomparable advantages of bulk silicon: elimination of parasitic latch-up effects, high integration density, and speed It is undoubtedly one of the most promising technologies due to its advantages such as high speed and small short channel effect. Contents of the invention [0003] The purpose of the present invention is to provide a strained silicon nano-film on an insulator, so as to solve the problem of low mobility of the existing ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/16B82Y30/00B82Y40/00
CPCH01L29/0669B82Y30/00B82Y40/00H01L29/16
Inventor 赵莉民
Owner 久耀电子科技(江苏)有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap