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Gas light detector based on Schottky barrier

A photodetector and Schottky potential technology, applied in the field of photodetectors, can solve problems such as single application functions, and achieve the effect of improving sensitivity and simple structure

Inactive Publication Date: 2019-01-18
中山科立特光电科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] For the problems referred to above, the purpose of the present invention is to solve the problem that the existing schottky barrier-based detector has a single application function

Method used

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Embodiment 1

[0022] In order to solve the problem of single application function of the existing Schottky barrier-based detectors. The present invention provides a figure 1 The shown gas photodetector based on Schottky barrier includes a semi-circular light-transmitting prism 1 with an arc surface below, and the arc surface of the semi-circle light-transmitting prism 1 faces downward for the incident light to facilitate Adjust the angle of incidence; the plane of the semicircular light-transmitting prism 1 faces upwards, which is convenient for setting other structures on the plane; Made of metal, the gas sensing layer 2 has a porous structure, which is convenient for gas filling, so that when the incident light is incident, a surface plasmon resonance reaction is generated, which affects the carrier distribution inside the N-type semiconductor layer 3, It affects the Schottky barrier of the Schottky junction between the N-type semiconductor layer 3 and the metal layer 4, so that the chan...

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Abstract

The invention relates to a gas light detector based on Schottky barrier. The detector comprises a semicircular transmitting prism, a gas induction layer arranged above a plane of the semicircular transmitting prism, a N-type semiconductor layer arranged above the gas induction layer, and a metal layer arranged above the N-type semiconductor layer, wherein the metal layer is electrically connectedwith a positive electrode of an external power supply, and the N-type semiconductor layer is electrically connected with a negative electrode of the external power supply. Through the gas light detector based on the Schottky barrier disclosed by the invention, the gas induction layer is arranged in the detector, incident light is shot into the gas induction layer to cause the Schottky barrier of aSchottky junction to change; different gases are filled in the gas induction layer to cause different changes of the Schottky barrier; under the condition of knowing the incident light characteristics, the characteristics of the to-be-detected gas is judged according to the Schottky barrier change; the gas light detector based on the Schottky barrier is simple in structure and can realize the multi-purpose application of the Schottky barrier detector.

Description

technical field [0001] The invention relates to the technical field of photodetectors, in particular to a gas photodetector based on a Schottky barrier. Background technique [0002] The physical effects of photodetectors are usually divided into photon effects and photothermal effects, and the corresponding detectors are called photon detectors and photothermal detectors, respectively. The common feature of various photon-type detectors is the use of semiconductor energy band materials. The photon energy has a direct effect on the generation of photoelectrons in the detection material. Therefore, photon-type detectors have a cut-off response frequency or wavelength, and the spectral response is limited to a certain band. Therefore Different material systems determine that detectors have different response wavelength ranges, which are generally difficult to use for wide-spectrum or multi-spectrum detection. For the photothermal detector, after absorbing the light radiation ...

Claims

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Application Information

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IPC IPC(8): G01N21/63G01N27/12B82Y15/00
CPCG01N21/63B82Y15/00G01N27/125
Inventor 不公告发明人
Owner 中山科立特光电科技有限公司
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