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Semiconductor memory device and method of operating the same

A memory and semiconductor technology, applied in the direction of static memory, read-only memory, digital memory information, etc., can solve the problems of low writing and reading speed of non-volatile memory devices, and achieve the effect of improving programming speed

Active Publication Date: 2022-05-24
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Non-volatile memory devices have relatively low write and read rates, but maintain stored data even when power is interrupted

Method used

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  • Semiconductor memory device and method of operating the same
  • Semiconductor memory device and method of operating the same
  • Semiconductor memory device and method of operating the same

Examples

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Embodiment Construction

[0022] See below and attached Figure 1 The advantages and features of the present disclosure, as well as methods for achieving them, will become apparent from the detailed description of the example embodiments. However, the present disclosure is not limited to the example embodiments described herein, but may be implemented in various different forms. However, the example embodiments described herein are provided to describe the present disclosure in detail so that those skilled in the art can easily implement the technical spirit of the present disclosure.

[0023] Throughout this specification and the claims that follow, when an element is described as being "coupled" to another element, the element can be "directly coupled" to the other element or "electrically coupled" to the other element through a third element . Throughout the specification and claims, unless expressly described to the contrary, the word "comprising" and variations such as "comprising" will be under...

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Abstract

A semiconductor memory device and a method of operating the same are disclosed. The semiconductor memory device includes: a memory cell array including a plurality of memory cells programmed into a plurality of programming states; a peripheral circuit configured to perform a program operation on the memory cell array; and a control logic configured to control the peripheral The circuit divides the plurality of programming states into two or more programming groups and sequentially programs the two or more programming groups during a programming operation, wherein the control logic controls the peripheral circuit to program the plurality of programming groups. Memory cells to be programmed to a program state included in the same program group among memory cells are programmed simultaneously.

Description

technical field [0001] The present disclosure relates to electronic devices, and more particularly, to semiconductor memory devices and methods of operating the same. Background technique [0002] Semiconductor memory devices among semiconductor devices are generally classified into volatile memory devices and nonvolatile memory devices. [0003] Non-volatile memory devices have relatively low write and read rates, but maintain stored data even when power is blocked. Therefore, non-volatile memory devices are used in order to store data that needs to be maintained regardless of the power supply. Nonvolatile memory devices include read only memory (ROM), mask ROM (MROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), flash memory, phase Variable RAM (PRAM), Magnetic RAM (MRAM), Resistive RAM (RRAM), Ferroelectric RAM (FRAM), etc. Flash memory is generally classified into NOR type and NAND type. [0004] Fla...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C7/12G11C7/10
CPCG11C7/1051G11C7/1078G11C7/12G11C8/12G11C11/5628G11C11/5642G11C16/0483G11C2211/5641G11C16/10G11C16/08G11C16/30G11C16/3459G11C16/24G11C16/26
Inventor 李熙烈
Owner SK HYNIX INC