Method and device for quickly acquiring light intensity distribution on wafer surface

Abstract

The invention discloses a method and an apparatus for quickly acquiring the light intensity distribution on a wafer surface. The light source function in the frequency domain and the pupil function inthe frequency domain are respectively projected onto a Fourier-Bessel orthogonal basis function to obtain the frequency domain projection coefficient of the light source function and the frequency domain projection coefficient of the pupil function. Then according to the transformation relationship between a Fourier-Bessel orthogonal basis function and a Circle-Bessel orthogonal basis function, the spatial domain projection coefficient of the light source function and the spatial domain projection coefficient of the pupil function are obtained. Next, a first set of pre-computed data sets is obtained, and a cross-transfer function is obtained according to the first set of pre-calculated data sets. Then, according to the obtained second set of pre-calculated data sets, cross-transfer functions, the first set of pre-calculated data sets, the spatial domain projection coefficients of the light source functions, and the spatial domain projection coefficients of the pupil functions, the projection coefficients of the kernel functions are obtained. Finally, the light intensity distribution of the wafer surface is obtained according to the projection coefficient of the kernel function andthe acquired third set of pre-calculated data sets.

Description

technical field [0001] The present application relates to the field of photolithography technology, and in particular to a method and device for quickly acquiring light intensity distribution on a wafer surface. Background technique [0002] The photolithography process uses the principle of photochemical reaction to transfer the pre-designed pattern on the mask to the surface of the wafer, which is an important process step in the manufacture of integrated circuits. The lithography process is realized by the lithography model, see figure 1 As shown in the structural diagram, the lithography model mainly includes: a light source, a condenser lens, a mask, a projection pupil, a projection lens, and a wafer. Combined with the lithography model, the lithography process includes: the light emitted from each light source passes through the condenser lens and becomes parallel light, and the parallel light is irradiated on the mask plate, so that the pattern on the mask plate pass...

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem that the calculation speed of the fast calculation method for the light intensity distribution on the wafer surface provided in the prior art cannot meet the process requirements, the present application discloses a method for quickly obtaining the light intensity distribution on the wafer surface through the following embodiments and device

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