Parallel structure and manufacturing method thereof, and electronic device comprising parallel structure

Abstract

The present invention discloses a parallel structure and a manufacturing method thereof, and an electronic device comprising a parallel structure. The parallel structure comprises source / drain layersand channel layers alternately stacked on a substrate and a gate stack formed by winding at least part of the periphery of each channel layer. Each channel layer, the source / drain layers at the upperand lower sides and the gate stack formed through winding form corresponding semiconductor devices. In each semiconductor device, one of the source / drain layers at the upper and lower sides of the corresponding channel layers is in contact with a first conductive channel arranged at the periphery of an active region, the other one of the source / drain layers is in contact with a second conductive channel arranged at the periphery of the active region, and the gate stack formed by winding the channel layers is in contact with a third conductive channel arranged at the periphery of the active region. The first conductive channel is common for all the semiconductor devices, the second conductive channel is common for all the semiconductor devices, and the third conductive channel is common forall the semiconductor devices.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and more particularly, to a compact parallel structure of a semiconductor device, a method of manufacturing the same, and an electronic device including such a parallel structure. Background technique [0002] Vertical devices have good device characteristics, such as good electrostatic properties, good control of short channel effects, small sub-threshold swing, and resulting low power consumption. This enables further scaling of the device to increase integration density. In some applications it is necessary to connect several transistors in parallel, for example in order to obtain a large drive current to drive other devices. These transistors can be stacked vertically to save area. However, the formation of interconnections between transistors is difficult. Contents of the invention [0003] In view of this, it is an object of the present disclosure to provide, at least in part, a ...

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Problems solved by technology

However, the formation of interconnections between transistors is difficult

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