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3D-NAND flash memory formation method

A 3D-NAND, flash memory technology, applied in electrical components, electric solid state devices, circuits, etc., can solve the problems of poor performance of 3D-NAND flash memory, and achieve the effect of reducing process costs and process steps

Active Publication Date: 2019-02-01
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, in the existing technology, the performance of 3D-NAND flash memory is poor

Method used

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  • 3D-NAND flash memory formation method
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  • 3D-NAND flash memory formation method

Examples

Experimental program
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Embodiment Construction

[0022] As mentioned in the background, the performance of the prior art 3D-NAND flash memory is poor.

[0023] A kind of 3D-NAND flash memory, the type of 3D-NAND flash memory is N type, refer to figure 1 3D-NAND flash memory includes: a semiconductor substrate 120; a stacked structure on the semiconductor substrate 120, the stacked structure includes cross-stacked insulating layers and control gates 130; a channel structure running through the stacked structure, the trench The channel structure includes a channel layer 150 and a memory layer 160 extending in a direction perpendicular to the surface of the semiconductor substrate 120, and the memory layer 160 includes a blocking dielectric layer, a storage layer and a tunneling dielectric layer; located in the top region of the channel structure N-type drain doped region 170.

[0024] There are two main ways to perform erasing operations in 3D-NAND, one is substrate bulk erasing, and the other is GIDL (gate induced drain leak...

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Abstract

The invention relates to a 3D-NAND flash memory formation method. The method includes the following steps that: a semiconductor substrate is provided; and a stacked structure and channel structures penetrating the stacked structure are formed on the on the semiconductor substrate, wherein the channel structure includes a channel layer, a drain doped region and an additional doped region, wherein the channel layer extends along a direction perpendicular to the surface of the semiconductor substrate, the drain doped region and the additional doped region are located at the top of the channel structure, the additional doped region is located at one side of the drain doped region, and the drain doped region and the additional doped region both cover a part of the channel layer, and the additional doped region has a conductivity type opposite to that of the drain doped region. With the method adopted, the performance of a 3D-NAND flash memory can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a 3D-NAND flash memory. Background technique [0002] Flash memory (Flash Memory) is also called flash memory. The main feature of flash memory is that it can keep stored information for a long time without power on, and has the advantages of high integration, fast access speed, easy erasing and rewriting, etc. , so it has become the mainstream memory of non-volatile memory. According to different structures, flash memory is divided into NOR Flash Memory and NAND Flash Memory. Compared with NOR Flash Memory, NAND Flash Memory can provide high cell density, high storage density, and faster writing and erasing speed. [0003] With the development of planar flash memory, the production process of semiconductors has made great progress. However, the current development of planar flash memory has encountered various challenges: physical limits, such a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/1157H01L27/11578H10B43/35H10B43/20
CPCH10B43/20H10B43/35
Inventor 刘峻霍宗亮
Owner YANGTZE MEMORY TECH CO LTD
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