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TDDB testing device for gate oxide layer in integrated circuit

A gate oxide layer and testing device technology, which is applied to measurement devices, single semiconductor device testing, semiconductor working life testing, etc., can solve problems such as a lot of time, and achieve the effect of shortening testing time

Active Publication Date: 2019-02-12
YANGTZE MEMORY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, some methods need to use 3 sets of TDDB tests (3E) with 3 different electric field strengths to obtain the lifetime of the gate oxide layer in integrated circuits, which requires a lot of time

Method used

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  • TDDB testing device for gate oxide layer in integrated circuit
  • TDDB testing device for gate oxide layer in integrated circuit
  • TDDB testing device for gate oxide layer in integrated circuit

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Embodiment Construction

[0016] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0017] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below. As indicated in this application and claims, the terms "a", "an", "an" and / or "the" do not refer to the singular and may include the plural unless the context clearly indicates an exception. Generally speaking, the terms "comprising" and "comprising" only suggest the inclusion of clearly identified steps and elements, and these steps and elements do not constitute an exclusive list, and the method or device may also contain other steps or el...

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Abstract

The invention relates to a TDDB testing device for a gate oxide layer in an integrated circuit. The TDDB testing device comprises a power supply, a connecting terminal and a control device. The powersupply is used for applying a test electric field. The connecting terminal is used for connecting the power supply and the gate oxide layer. The control device is connected with the power supply; andthe control device is configured to obtain breakdown field strength determined by performing ramp voltage testing on the grid oxide layer, perform TDDB testing on the grid oxide layer in the test electric field to obtain breakdown time, determine an electric field acceleration factor according to according to the ramp rate of the ramp voltage testing, the breakdown field strength, the breakdown time and the field strength of the test electric field, and calculate the service life of the grid oxide layer by using the electric field acceleration factor.

Description

technical field [0001] The invention relates to a reliability test of a semiconductor device, in particular to a TDDB (Time-Dependent Dielectric Breakdown, Time-Dependent Dielectric Breakdown) test device for gate oxide layers in integrated circuits. Background technique [0002] In the manufacture of integrated circuits, the gate oxide layer (Gate Oxide) is the most important part of the basic unit device, and its quality determines the performance of the device. [0003] Methods for evaluating the reliability of the gate oxide layer include voltage ramp (Voltage ramp) testing and time-dependent dielectric breakdown (TDDB) testing, hereinafter referred to as Vramp testing and TDDB testing. The reliability of the gate oxide layer can be evaluated by Vramp test and TDDB test. However, some methods need to perform 3 sets of TDDB tests (3E) using 3 different electric field strengths to obtain the lifetime of the gate oxide layer in integrated circuits, which requires a lot of ...

Claims

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2603G01R31/2642
Inventor 杨盛玮韩坤
Owner YANGTZE MEMORY TECH CO LTD
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