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Semiconductor device and manufacturing method thereof

A technology of semiconductors and wires, which is applied in the field of semiconductor devices and their production, and can solve the problems that the manufacturing and processing technology of semiconductor devices cannot be completely satisfactory.

Active Publication Date: 2022-05-17
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Therefore, traditional semiconductor device manufacturing and processing technologies are not fully satisfactory

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

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Embodiment Construction

[0012] The following disclosure describes various example implementations for achieving the different features of the subject matter. Specific embodiments of components and configurations are described below to simplify the present disclosure. Of course, these are examples only and are not intended to be limiting. For example, it will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element, or one or more intervening elements may be present. .

[0013] In addition, the present disclosure may repeat element symbols and / or letters in various embodiments. This repetition is for simplicity and clarity, and does not in itself determine the relationship between the various implementations and / or configurations discussed.

[0014] In addition, spatially relative terms such as "below," "beneath," "lower," "above," "upper," and the like may be used herein to simplify describi...

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Abstract

A semiconductor device includes: at least one conductive feature disposed on a substrate; at least one dielectric layer covering the substrate, a trench structure extending through the at least one dielectric layer; and a protective layer covering the trench structure.

Description

technical field [0001] The present disclosure relates to a semiconductor device and a manufacturing method thereof. Background technique [0002] The semiconductor industry has continued to pursue higher device densities and lower costs. Technological advances in semiconductor devices or integrated circuits (ICs), materials, design and manufacturing processes have produced increasingly smaller circuits. In the course of this IC evolution, functional density (eg, the number of interconnected devices per die area) has typically increased while geometries have decreased. This downscaling process typically provides benefits by increasing production efficiency and reducing associated costs. [0003] However, increasing functional density has increased the complexity of ICs, for example by reducing the distance between interconnect devices and the number of dielectric layers per die area. Thus, there may be a greater chance of failure per wafer area during semiconductor process...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/538
CPCH01L23/5386H01L21/78H01L23/5384H01L21/76843H01L21/76229H01L23/53266
Inventor 郭富强刘陶承郭仕奇李宗宪
Owner TAIWAN SEMICON MFG CO LTD
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