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A kind of three-dimensional storage device and its preparation method

A three-dimensional storage and device technology, which is applied to semiconductor devices, electric solid-state devices, electrical components, etc., can solve problems such as affecting the working reliability of storage devices, increasing the overall resistance value of the channel layer, affecting the deposition uniformity of the channel layer, etc. Achieve the effect of increasing thickness, increasing contact area and avoiding disconnection

Active Publication Date: 2021-04-27
YANGTZE MEMORY TECH CO LTD
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  • Abstract
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Problems solved by technology

However, the deposition process of the channel layer will be affected by the shape and structure of the previously formed channel via holes and the functional layer. The shape and structure formed by the previous process will directly affect the uniformity of channel layer deposition. Increase the overall resistance value of the channel layer, and even increase the risk of disconnection of the channel layer, which seriously affects the working reliability of the storage device

Method used

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  • A kind of three-dimensional storage device and its preparation method
  • A kind of three-dimensional storage device and its preparation method
  • A kind of three-dimensional storage device and its preparation method

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Embodiment Construction

[0053]An exemplary embodiment of the present disclosure will be described in more detail below with reference to the accompanying drawings. While the exemplary embodiments of the present invention are shown in the drawings, it should be understood that the present invention can be implemented in various forms, and the specific embodiments set forth herein are not intended. Instead, it is provided to be more specifically understood to be more generally understood, and the scope of the scope disclosed in the present invention can be contemplated to those skilled in the art.

[0054]In the following description, a large number of specific details are given to provide more thorough understanding of the present invention. However, it will be apparent to those skilled in the art that the present invention may be implemented without one or more of these details. In other examples, in order to avoid confusion with the present invention, there is no description thereof in the art; that is, all ...

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Abstract

The invention discloses a three-dimensional storage device and a preparation method thereof. The three-dimensional memory device has a channel through hole, and the method includes the following steps: forming a functional layer on the sidewall and bottom of the channel through hole; removing the functional layer covering the bottom of the channel through hole , so that the functional layer is formed into the following structure: the inner wall of the bottom end of the functional layer is recessed in the radially outward direction of the channel through hole, so that the inner wall of the functional layer is formed with a step at the bottom end; or, The inner wall of the functional layer is a flat surface in the axial direction of the channel through hole.

Description

Technical field[0001]The present invention relates to the field of memory devices, and more particularly to a three-dimensional memory device and a preparation method thereof.Background technique[0002]Memory is a memory device for saving information in modern information technology. With the continuous improvement of various electronic devices on integration and data storage density, ordinary two-dimensional memory devices are increasingly difficult to meet the requirements, in which case three-dimensional (3D) memory devices come.[0003]The three-dimensional memory device is mainly consisting of a substrate and a multilayer stack structure located on the surface of the substrate and a plurality of channel via formed in the stacked structure, and a functional layer and a channel layer are formed in the channel through hole. The channel layer is coupled to the position line (BL) of the tip end of the channel through hole (SEG) to the bottom of the channel through hole, thereby forming...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11582H01L27/11568
CPCH10B41/27H10B69/00H10B43/27
Inventor 王启光蓝天靳磊夏志良张安李伟蒲月强闫亮
Owner YANGTZE MEMORY TECH CO LTD
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