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A kind of gallium nitride-based light-emitting diode epitaxial wafer and preparation method thereof

A light-emitting diode, gallium nitride-based technology, used in semiconductor devices, electrical components, circuits, etc., can solve problems such as large stress, affecting the shielding effect of AlGaN layer on dislocations, etc., to reduce density, avoid film cracks, reduce The effect of dislocation lines

Active Publication Date: 2020-03-27
HUAIAN AUCKSUN OPTOELECTRONICS TECHNOLOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the large lattice mismatch between GaN and AlN, there will be a large stress at the interface between GaN and AlGaN, which affects the shielding effect of the AlGaN layer on dislocations.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0030] in Al x Ga (1-x) N / AlN / GaN superlattice stress relief layer, Al x Ga (1-x) N / AlN are X value of 0.15 at H 2 Under the conditions of 20 cycles, the pressure is 100mbar, the temperature is 1050℃, and the growth of Al x Ga (1-x) N layer 3nm, AlN layer thickness 2nm, GaN thickness 5nm.

example 2

[0032] in Al x Ga (1-x) N / AlN / GaN superlattice stress relief layer, Al x Ga (1-x) N / AlN are X value of 0.15 at H 2 Under the conditions of 10 cycles of growth, the pressure is 300mbar, the temperature is 1090℃, and the growth of Al x Ga (1-x) N layer 5nm, AlN layer thickness 3nm, GaN thickness 7nm.

example 3

[0034] in Al x Ga (1-x) N / AlN / GaN superlattice stress relief layer, Al x Ga (1-x) N / AlN are X value of 0.2, at H 2 Under the conditions of 10 cycles of growth, the pressure is 300mbar, the temperature is 1090℃, and the growth of Al x Ga (1-x) N layer 5nm, AlN layer thickness 3nm, GaN thickness 7nm.

[0035] Under the condition of hydrogen, the temperature continues to rise by 10-20°C, and the pressure is turned to 500-600mbar, so that the 3D growth mode is transformed into the intrinsic 2D growth mode;

[0036] The temperature is 1000-1080°C, the pressure is 200-300mbar, and Si atoms are added to form an n-type GaN layer;

[0037] Grow 5-8 nsls stress release layers at a temperature of 750-800°C;

[0038] 10-15 MQW layers under the same growth conditions as step 6;

[0039] in N 2 and H 2 Under mixed conditions, the temperature rises to 900-1050°C to grow and incorporate Mg atoms to form a p-GaN layer.

[0040] Description of the innovation point: the general paten...

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Abstract

The invention belongs to the technical field of preparation of semiconductor devices, and provides a gallium nitride based light emitting diode epitaxial wafer and its preparation method. The galliumnitride based light emitting diode epitaxial wafer comprises a sapphire substrate, an AIN buffer layer, a superlattice stress relief layer, a 2D GsN layer, an n-type GaN layer, an MQW light-emitting layer and a P type GaN layer from bottom to top sequentially, wherein the superlattice stress relief layer is prepared by inserting AlxGa(1-x)N / ALN / GaN in 5-20 cycles in 3D growth process. The superlattice growth pattern can effectively regulate stress of the epitaxial layer, effectively prevent film cracking after growth of the epitaxial layer, and improve growth quality of the GaN thin film. Thesuperlattice can release stress effectively, a built-in electric field generated by stress in the MQW light emitting layer can be weakened greatly, quantum well energy band is reduced obliquely, electronic and hole wave functions increase in overlap, and the brightness of the MQW light emitting layer is increased greatly.

Description

technical field [0001] The invention belongs to the technical field of light-emitting diode preparation, and relates to a gallium nitride-based light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] In recent years, GaN-based LEDs based on sapphire substrates have been successfully mass-produced and commercialized. With the saturation of the LED market, the competition among LED manufacturers is becoming more and more fierce, and the price war between LED downstream manufacturers is intensifying. The requirements for parameters and indicators are becoming more and more stringent. [0003] Due to the large lattice mismatch and thermal mismatch between the sapphire substrate and GaN, there is a large stress in the epitaxial layer of the LED, and there are a large number of dislocations in the epitaxial layer, and these dislocations will extend into the light-emitting layer. Seriously affect the brightness of the chip. In order t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/04H01L33/12H01L33/32H01L33/00
CPCH01L33/0066H01L33/0075H01L33/04H01L33/12H01L33/32
Inventor 吕腾飞芦玲祝光辉刘坚
Owner HUAIAN AUCKSUN OPTOELECTRONICS TECHNOLOGY CO LTD
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