Perovskite nano film prepared based on 'hot air method', preparation method thereof and application in solar battery

A nano-film and perovskite technology, applied in the field of solar cells, can solve the problems of rapid preparation of perovskite films, etc., and achieve the effects of improving the surface, good controllability, and good application prospects.

Inactive Publication Date: 2019-02-26
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing perovskite nano-films based on the "hot air method" to solve the problems that need to be improved in the current stable and rapid preparation process of perovskite films

Method used

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  • Perovskite nano film prepared based on 'hot air method', preparation method thereof and application in solar battery
  • Perovskite nano film prepared based on 'hot air method', preparation method thereof and application in solar battery
  • Perovskite nano film prepared based on 'hot air method', preparation method thereof and application in solar battery

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Experimental program
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Effect test

Embodiment 1

[0043] a. Combine PEAI, MAI, PbI 2 Dissolve in DMF solvent according to the molar ratio of 2:2:3, and prepare the molecular formula as (PEA) 2 MA 2 Pb 3 I 10 Precursor solution, stirred at room temperature until the solution is clear, and filtered with a 0.22 μm filter membrane for future use, based on Pb 2+ The calculated concentration of the precursor solution was 0.3 mol / L.

[0044] b. Use a plasma cleaning machine to process the conductive substrate for 10 minutes, and finally obtain a conductive glass with good surface wettability.

[0045] c. In the present invention, when the precursor solution is dripped onto the substrate, a certain temperature still needs to be maintained. Therefore, the conductive substrate is placed on a heating plate for preheating before spin coating. The heating temperature is 180°C and the preheating time is 10 minutes.

[0046] d. Drop the precursor solution prepared in step a onto the hot conductive substrate, spin coating to spread the li...

Embodiment 2

[0051] a. Combine PEAI, MAI, PbI 2 Dissolve in DMF solvent according to the molar ratio of 2:2:3, and prepare the molecular formula as (PEA) 2 MA 2 Pb 3 I 10 Precursor solution, stirred at room temperature until the solution is clear, and filtered with a 0.22 μm filter membrane for future use, based on Pb 2+ The calculated concentration of the precursor solution was 0.6 mol / L.

[0052] b. Use a plasma cleaning machine to treat the conductive substrate for 15 minutes, and finally obtain a conductive glass with good surface wettability.

[0053] c. In the present invention, when the precursor solution is dropped onto the substrate, a certain temperature still needs to be maintained. Therefore, the conductive substrate is placed on a heating plate for preheating before spin coating. The heating temperature is 140°C and the preheating time is 10 minutes.

[0054] d. Drop the precursor solution prepared in step a onto the hot conductive substrate, spin coating to spread the li...

Embodiment 3

[0059] a. Combine PEAI, PbI 2 Dissolve in DMF solvent according to the molar ratio of 2:1, and prepare the molecular formula as (PEA) 2 PB 4 Precursor solution, stirred at room temperature until the solution is clear, and filtered with a 0.22 μm filter membrane for future use, based on Pb 2+ The calculated concentration of the precursor solution was 0.1 mol / L.

[0060] b. Use a plasma cleaning machine to process the conductive substrate for 30 minutes, and finally obtain a conductive glass with good surface wettability.

[0061] c. In the present invention, when the precursor solution is dropped onto the substrate, a certain temperature still needs to be maintained. Therefore, the conductive substrate is placed on a heating plate for preheating before spin coating. The heating temperature is 160°C and the preheating time is 10 minutes.

[0062] d. Drop the precursor solution prepared in step a onto the hot conductive substrate, spin coating to spread the liquid evenly to ob...

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PUM

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Abstract

The invention discloses a perovskite nano film prepared based on a 'hot air method', a preparation method thereof and application in a solar battery. The preparation method of the perovskite nano filmcomprises the steps that a a perovskite precursor solution is prepared; b a substrate is preheated, and the heated precursor solution is dropped onto the conductive substrate; and c when spin coatingis carried out, a hot air cylinder is placed above a spin coater to rapidly evaporate the solution to acquire a perovskite crystal. According to the method provided by the invention, the crystallinity of the perovskite nanocrystal can be adjusted; the surface of the perovskite nano film is improved; and the method has a good application prospect in the development research of perovskite photovoltaic devices.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a perovskite nano film prepared based on a "hot air method", a preparation method thereof and an application in solar cells. Background technique [0002] The development and utilization of clean energy is a major problem that needs to be solved urgently in the economic development of countries all over the world. In recent years, organic-inorganic hybrid lead halide perovskite compounds have attracted extensive attention due to their unique optoelectronic properties and great potential applications in photovoltaic devices, LEDs, and photodetection. Lead halide perovskite compounds have the advantages of small band gap, good light absorption performance, and high carrier mobility. Since 2009, the photoelectric conversion efficiency of solar cells based on lead halide perovskite compounds has exceeded 22%, making Its application in the field of solar cells has ach...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/48
CPCH10K71/00H10K71/12H10K30/10H10K30/80Y02E10/549
Inventor 张杰陈树煌傅志勇
Owner SOUTH CHINA UNIV OF TECH
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