Film forming device, film forming pallets, film forming method, and manufacturing method of film forming pallets

Abstract

The invention relates to a film forming device, film forming pallets, a film forming method, and a manufacturing method of the film forming pallets. The purposes of reducing the manufacturing cost andincreasing the rate of finished products are achieved. According to the film forming device, the multiple pallets (1) for film forming are loaded with silicon wafers (5) and are conveyed on a film forming conveying way (11A), and a film forming heater (13b), a plurality of gas spraying heads (13A, 13B, 13C) for blowing raw material gas, and a circulation mechanism (15) for circulating the film forming pallets after film forming are included; each pallet for film forming is composed of a pallet body (2) and a bearing ring (3) erected on the pallet body; and lower surfaces (3d) of loading arrangement parts (3c) of the bearing rings (3) are separated from faces (2a) of the pallet bodies, the pallet bodies are made of powder sintered ceramic, and the bearing rings are cut out by the large-block ceramic growing from a gaseous phase.

Description

technical field [0001] The present invention relates to a film-forming apparatus, a film-forming tray, a film-forming method, and a method for manufacturing a film-forming tray, and particularly relates to a film-forming device suitable for use in a CVD method using a CVD tray on which a silicon wafer is placed. A technique used in film formation to make the thickness distribution of an oxide film formed on the surface of a silicon wafer uniform. Background technique [0002] In an equipment process or an epitaxial silicon wafer manufacturing process, a process of forming a protective film and an insulating film on a silicon wafer is performed. For example, in the device process, an oxide film or the like is formed as an interlayer insulating film on the surface side of a silicon wafer used as a device fabrication region, and then wiring is formed. [0003] In addition, in the manufacturing process of epitaxial wafers, when a silicon epitaxial layer with high resistivity is...

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Problems solved by technology

[0015] However, in the single-side polishing process, the film-forming surface is kept and the non-film-forming surface is single-sidedly polished. Therefore, if the oxide film thickness distribution is not uniform, the wafer is held in its original state of elastic deformation, and there is no problem after polishing. The uniform oxide film thickness distribution is transferred to the non-film-forming surface, so the flatness of the silicon wafer deteriorates

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