Method for holding ultrathin semiconductor wafer in semiconductor integration process

Abstract

The invention discloses a method for holding an ultrathin semiconductor wafer in a semiconductor integration process. The method comprises steps of 1) spin-coating the front side of a first temporarycarrier with a first temporary bonding adhesive; 2) oppositely bonding the ultrathin semiconductor wafer to the front side of the first temporary carrier; 3) spin-coating the front side of a second temporary carrier with a second temporary bonding adhesive; 4) oppositely bonding the ultrathin semiconductor wafer to the front side of the second temporary carrier; 5) separating the ultrathin semiconductor wafer from the first temporary carrier; 6) preparing an integrated interconnection structure; 7) performing a bonding integration process; and 8) separating the integrated wafer from the secondcarrier. The method, by means of the matching of the two temporary bonding adhesives having different softening temperatures and two temporary carriers and by using uses temporary bonding and debonding processes, ensures that the ultrathin semiconductor wafer is supported by the temporary carriers in transmission, clamping, interconnection structure manufacture, and a three-dimensional integration process such as bonding, and reduces the facture risk in the integrated process.

Description

technical field [0001] The invention belongs to the technical field of semiconductor technology, and in particular relates to a method for holding ultra-thin semiconductor wafers in semiconductor integration technology. Background technique [0002] The three-dimensional stacking integration technology of semiconductor chips is one of the key ways for electronic components to be further miniaturized, lightweight, multi-functional and intelligent in the post-Moore era. By stacking and integrating various semiconductor devices or wafers in the vertical direction, it can reduce Small system size, light weight, while improving overall performance. Generally speaking, the front and back processes of the wafer to be integrated have been completed or most of them have been completed. In order to improve the electrical performance of the device circuit, improve the heat dissipation efficiency, and reduce the packaging volume, etc., it is necessary to thin the semiconductor wafer to ...

AI Technical Summary

Problems solved by technology

As the thickness of the wafer decreases, the ultra-thin semiconductor wafer itself no longer has enough strength to maintain a flat state. Due to stress and its own gravity, the ultra-thin semiconductor wafer is easily deformed and curled. Fragmentation easily during transfer and processing

In addition, on the surface of semiconductor chips, especially microwave and millimeter wave chips, the wiring of many air bridge structures in the distribution, the stress on the wafer and the resulting large-scale deformation are likely to cause the breakage of the air bridge structure

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