Semiconductor etching device

Abstract

The present invention provides a semiconductor etching device comprising an upper electrode spraying disk, an annular sidewall connected to the upper electrode spraying disk, a lateral flow reaction element connected to the annular sidewall, and a lower electrode carrying table aligned under the lateral flow reaction element, wherein the lateral flow reaction element comprises at least two layersof reactive material rings and a plurality of connection parts between the reactive material rings, the connection parts are used for providing s a plurality of filtration channels at the side wall ofthe lateral flow reaction element, the reaction material rings are integrally formed with the connection parts to inhibit the adhesion of a reaction product on the lateral flow reaction element. According to the invention, the adhesion state of a reaction chamber body product of a dry etching machine can be effectively improved by integrally forming the reaction material rings and the connectingparts, the influence of the cleanliness of a wafer surface caused by the falling of the product during the movement process of the lateral flow reaction element is avoided, and the product reliabilityand yield are effectively improved.

Description

Technical field [0001] The invention belongs to the field of semiconductor equipment design and manufacturing, and particularly relates to a semiconductor etching equipment. Background technique [0002] Dry etching is a technique that uses plasma to etch thin films. When the gas exists in the form of plasma, it has two characteristics: On the one hand, the chemical activity of these gases in the plasma is much stronger than in the normal state. According to the different materials to be etched, selecting the right gas can be faster React with the material to achieve the purpose of etching and removal; on the other hand, the electric field can also be used to guide and accelerate the plasma to make it have a certain amount of energy. When it bombards the surface of the etched object, it will be etched The atoms of the material are knocked out, so as to achieve the purpose of using physical energy transfer to achieve etching. [0003] In the case of increasingly fierce competition...

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Problems solved by technology

[0007] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a semiconductor etching equipment, which is used to solve the problems in the prior art that the dry etching reaction chamber is relatively easy to attach reaction products, and the disassembly and assembly are relatively cumbersome.

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