Semiconductor etching equipment

An etching equipment and semiconductor technology, which is applied in the manufacture of semiconductor/solid-state devices, discharge tubes, electrical components, etc., can solve the problems of easy adhesion of reaction products, cumbersome disassembly and assembly, etc., so as to increase the efficiency of irregular maintenance and improve the adhesion state , the effect of a wide range of application prospects

Active Publication Date: 2021-01-26
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a semiconductor etching equipment, which is used to solve the problems in the prior art that the dry etching reaction chamber is relatively easy to attach reaction products, and the disassembly and assembly are relatively cumbersome.

Method used

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  • Semiconductor etching equipment
  • Semiconductor etching equipment
  • Semiconductor etching equipment

Examples

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Embodiment 1

[0055] Such as Figure 3 ~ Figure 5 As shown, among them, image 3 It is shown as a schematic diagram of the assembly structure of the semiconductor etching equipment of this embodiment, Figure 4 It is shown as a schematic diagram of the disassembled structure of the semiconductor etching equipment of this embodiment, Figure 5 Shown is a cross-sectional view of the disassembled structure of the semiconductor etching device of this embodiment. This embodiment provides a semiconductor etching device, which includes: an upper electrode spray plate 201 installed in the chamber of the semiconductor etching device to provide plasma gas; an annular side wall 202; connected to The upper electrode spray plate 201; the side flow reaction element, connected to the annular side wall 202; and the lower electrode platform 210, aligned below the side flow reaction element and installed in the chamber of the semiconductor etching equipment Indoor; wherein, the lateral flow reaction eleme...

Embodiment 2

[0066] Such as Figure 6 ~ Figure 7 As shown, among them, Image 6 It is shown as a cross-sectional view of the disassembled structure of the semiconductor etching equipment, Figure 7 It is shown as a cross-sectional view of the assembled structure of the semiconductor etching equipment. This embodiment provides a semiconductor etching device, the basic structure of which is as in Embodiment 1, wherein the difference from Embodiment 1 is that the quartz ring 203 has a bonding hole 208 extending laterally outward, and the annular side wall The positioning column 205 has a clamping hole 206 corresponding to the position of the combining hole 208. After the positioning column 205 is combined with the positioning groove 207, the combining hole 208 and the clamping hole 206 are aligned with each other to limit the position. The pin 209 passes through to prevent the positioning column 205 from sliding relative to the positioning groove 207 , that is, to prevent the lateral flow r...

Embodiment 3

[0070] This embodiment provides a semiconductor etching device, the basic structure of which is the same as that of Embodiment 1, wherein the difference from Embodiment 1 is that the lower surface of the annular side wall 202 has several positioning grooves 207, and the quartz The ring 203 has several positioning posts 205 corresponding to the positioning grooves 207 , and the positioning posts 205 are combined with the positioning grooves 207 to realize the fixed connection between the quartz ring 203 and the annular side wall 202 . Further, the annular side wall 202 has a combination hole 208 extending laterally outward, and the positioning post 205 has a locking hole 206 corresponding to the position of the combination hole 208 , when the positioning post 205 and the positioning groove 207 After the combination, the combination hole 208 and the locking hole 206 are aligned with each other and connected with the limit pin 209 to prevent the positioning column 205 from sliding...

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Abstract

The present invention provides a semiconductor etching device comprising an upper electrode spraying disk, an annular sidewall connected to the upper electrode spraying disk, a lateral flow reaction element connected to the annular sidewall, and a lower electrode carrying table aligned under the lateral flow reaction element, wherein the lateral flow reaction element comprises at least two layersof reactive material rings and a plurality of connection parts between the reactive material rings, the connection parts are used for providing s a plurality of filtration channels at the side wall ofthe lateral flow reaction element, the reaction material rings are integrally formed with the connection parts to inhibit the adhesion of a reaction product on the lateral flow reaction element. According to the invention, the adhesion state of a reaction chamber body product of a dry etching machine can be effectively improved by integrally forming the reaction material rings and the connectingparts, the influence of the cleanliness of a wafer surface caused by the falling of the product during the movement process of the lateral flow reaction element is avoided, and the product reliabilityand yield are effectively improved.

Description

technical field [0001] The invention belongs to the field of design and manufacture of semiconductor equipment, in particular to semiconductor etching equipment. Background technique [0002] Dry etching is a technique that uses plasma to etch thin films. When the gas exists in the form of plasma, it has two characteristics: on the one hand, the chemical activity of these gases in the plasma is much stronger than that under normal conditions. React with the material to achieve the purpose of etching and removal; on the other hand, the electric field can also be used to guide and accelerate the plasma, so that it has a certain energy. When it bombards the surface of the etched object, it will be etched The atoms of the object material are knocked out, so as to achieve the purpose of etching by physical energy transfer. [0003] In the context of increasingly fierce competition in the semiconductor manufacturing industry, there are special requirements for the improvement of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67H01J37/32
CPCH01J37/32853H01L21/67069
Inventor 不公告发明人
Owner CHANGXIN MEMORY TECH INC
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