The application belongs to the field of
semiconductor MEMS device
processing, and particularly relates to a structure-assisted electromagnetic MEMS micromirror
processing method, which improves the problems of high
processing complexity and high
processing cost existing in the prior art. By using the schemes of selective
silicon-
silicon bonding after local roughening, thick
silicon MEMS processing technology based on conventional silicon-silicon bonding, fusion of high-precision
laser cutting in the MEMS processing flow, increase of temporary support and heat dissipation structure and the like, the dependence of the MEMS micromirror processing process on the temporary bonding and debonding equipment and technology required for
wafer processing can be reduced, the
machine time occupation of the
single crystal silicon
dry etching equipment is reduced, the
processing cost is controlled, the mutual compatibility of each single-step process in the process flow is improved, the processing can be realized only by using the combination of conventional equipment and its process, the complexity of the processing process is reduced, the
processing cost is reduced, and the electromagnetic MEMS micromirror has good manufacturability.