Direct preparation method of graphene/metal or alloy composite material

A composite material, graphene technology, applied in the direction of metal material coating process, polycrystalline material growth, chemical instruments and methods, etc., can solve the problems of reduced quality and functional characteristics, graphene edge damage, graphene quality degradation and other problems, Achieve the effect of eliminating the destruction of graphene quality, rapid preparation and low cost

Inactive Publication Date: 2016-11-09
HUBEI INST OF AEROSPACE CHEMOTECHNOLOGY
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Problems solved by technology

However, graphene obtained by conventional CVD methods needs to be separated and transferred before it can be combined with the target material. This process easily leads to damage to the edges of graphene, thereby reducing its quality and functional properties.
Therefore, researchers have also invented a method to directly grow graphene on the target material, but the quality of graphene will also be reduced, affecting its application ability

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  • Direct preparation method of graphene/metal or alloy composite material
  • Direct preparation method of graphene/metal or alloy composite material
  • Direct preparation method of graphene/metal or alloy composite material

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preparation example Construction

[0038] The direct preparation method of graphene / metal or alloy composite material of the present invention, comprises the steps:

[0039] (1), use dilute acid to clean the oxide layer and impurities on the surface of the metal (alloy) foil, then use deionized water and acetone to ultrasonically clean the metal (alloy) substrate, and dry; wherein the type of dilute acid is dilute Hydrochloric acid, acetic acid or hypochlorous acid, the concentration of dilute acid is 0.01mol / L~0.05mol / L.

[0040] (2) Remove the oxide layer on the surface of the metal or alloy. The specific method is: place the metal or alloy in the constant temperature heating zone of the quartz tube of the CVD reaction furnace, and evacuate it to below 1Pa, and then pour protective gas into the quartz tube to rinse repeatedly for 3 ~5 times to ensure that there is no air in the quartz tube, then open the CVD reaction furnace to raise the temperature to the set temperature, then pass protective gas and reducin...

Embodiment 1

[0050] Step 1: Use hydrochloric acid with a concentration of 0.01mol / L to clean the oxide layer and impurities on the surface of the Ni foil, then use deionized water and acetone to ultrasonically clean the Ni foil substrate, and dry it.

[0051] Step 2: Place the treated Ni foil (4cm×4cm) substrate in the constant temperature heating zone of the quartz tube of the CVD reaction furnace, and evacuate to below 1Pa.

[0052] Step 3: Inject nitrogen gas into the quartz tube and rinse repeatedly 3 to 5 times to ensure that there is no air in the quartz tube, then turn on the CVD reactor and heat up to 850°C, and then inject nitrogen and hydrogen into the quartz tube for 20 minutes, with mass flow rates of 600 sccm and 100 sccm respectively , keep the pressure inside the quartz tube at 10Pa, and remove the fresh NiO layer on the surface of the Ni foil.

[0053] Step 4: According to the melting point of Ni metal, heat to 1050° C., keep the pressure in the quartz tube as 10 Pa, and fe...

Embodiment 2

[0060] Step 1: Clean the oxide layer and impurities on the surface of the Ti foil with 0.05 mol / L acetic acid, then ultrasonically clean the Ti substrate with deionized water and acetone, and dry it.

[0061] Step 2: Place the treated Ti foil (2cm×2cm) substrate in the constant temperature heating zone of the quartz tube of the CVD reaction furnace, and evacuate to below 1Pa.

[0062] Step 3: Inject helium into the quartz tube and rinse repeatedly 3 to 5 times to ensure that there is no air in the quartz tube, then turn on the CVD reaction furnace and raise the temperature to 900°C, then inject helium and carbon monoxide into the quartz tube for 10 minutes, with a mass flow rate of 500 sccm respectively and 150sccm, keep the pressure inside the quartz tube at 50Pa, remove the fresh TiO on the surface of the Ti foil 2 layer.

[0063] Step 4: According to the melting point of Ti metal, heat to 1100° C., keep the pressure in the quartz tube at 50 Pa, and feed helium and propane ...

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Abstract

The invention relates to a direct preparation method of a graphene/metal or alloy composite material. A cheap and easily available carbon source gas is adopted as a reaction raw material, active metal or alloy foil is adopted as a substrate, and graphene catalytically grows on the surface of the metal or alloy substrate through a CVD technology in reducing gas and protection atmosphere to prepare the graphene/metal (alloy) composite material through one step, so problems brought by routine synthesis, separation and transfer of graphene and a target material recompounding technology are solved, rapid preparation of the high-quality graphene/metal (alloy) composite material is realized, and requirements for graphene applied to parts of electronic devices and composite materials are met. The method has the advantages of simple process flow, low cost, controllable graphene layer number, elimination of destroys of the separation and transfer process to the quality of graphene, and reduction of the recompounding technology risk of graphene and metal (alloy).

Description

technical field [0001] The invention relates to a controllable synthesis method of graphene chemical vapor deposition method, in particular to a direct preparation method of graphene / metal or alloy composite material. Background technique [0002] Graphene is a carbon atom with sp 2 The hybrid orbitals form a hexagonal planar film with a honeycomb lattice, a two-dimensional material with a thickness of only one carbon atom. Its thickness is only 0.335 nanometers, which is only 1 / 200,000th of the diameter of a hair. "Cut" different shapes of sheets from graphene, warping can get zero-dimensional fullerene, curling can get one-dimensional barrel-shaped carbon nanotubes, stacking can get three-dimensional graphite, so we think graphene is The basic unit that constitutes other carbon materials is the most ideal carbon material so far. The successful preparation of two-dimensional crystal materials represented by graphene has opened up a new era of development of new nanomater...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/02C30B25/18C30B29/02C23C16/26
CPCC23C16/26C30B25/02C30B25/186C30B29/02
Inventor 顾健张小平庞爱民付磊
Owner HUBEI INST OF AEROSPACE CHEMOTECHNOLOGY
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