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A kind of preparation method of graphene

A technology of graphene and organic salts, which is applied in the field of graphene material preparation, can solve the problems of high preparation cost, and achieve the effects of fewer carbon atomic layers, lower system energy, and larger area

Active Publication Date: 2022-01-25
HARBIN INST OF TECH AT WEIHAI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because graphene often needs to provide high temperature, high pressure or high temperature and high pressure reaction conditions to the system during the preparation process, the preparation cost is very high.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] At room temperature, dissolve copper oleate containing divalent copper in a mixed solvent of oleic acid and n-octanol to make a copper-containing organic salt solution with a copper concentration of 0.001mol / L; The solution was placed in a nitrogen atmosphere, heated at normal pressure, and the gas flow rate was 75mL min -1 , the heating rate is 5°C / min, when it is heated to 250°C, it is kept for 30 minutes to form an area of ​​3-4cm 2 graphene-copper composites. A single crystal silicon wafer is selected as the substrate, and the resulting graphene-copper composite material is transferred. The specific transfer method is as follows: the surface of the silicon wafer is placed obliquely, and the gas-liquid interface formed between the copper-containing organic salt solution and the protective atmosphere side, gradually approaching the surface of the graphene-copper composite material formed at the gas-liquid interface, until the contact, the graphene-copper composite ma...

Embodiment 2

[0024] At room temperature, dissolve copper oleate containing divalent copper in a mixed solvent of oleic acid and n-octanol to prepare a copper-containing organic salt solution with a copper concentration of 0.02mol / L; The solution was placed in a nitrogen atmosphere, heated at normal pressure, and the gas flow rate was 75mL min -1 , the heating rate is 5°C / min, when it is heated to 250°C, it is kept for 30 minutes to form an area of ​​3-4cm 2 graphene-copper composites. A single crystal silicon wafer is selected as the substrate, and the resulting graphene-copper composite material is transferred. The specific transfer method is as follows: the surface of the silicon wafer is placed obliquely, and the gas-liquid interface formed between the copper-containing organic salt solution and the protective atmosphere side, gradually approaching the surface of the graphene-copper composite material formed at the gas-liquid interface, until the contact, the graphene-copper composite ...

Embodiment 3

[0027] At room temperature, dissolve copper oleate containing divalent copper in a mixed solvent of oleic acid and n-octanol to make a copper-containing organic salt solution with a copper concentration of 0.001mol / L; The solution was placed in a nitrogen atmosphere, heated at normal pressure, and the gas flow rate was 75mL min -1, the heating rate is 5°C / min, when heated to 150°C, keep warm for 30min, and the forming area reaches 0.5-1cm 2 graphene-copper composites. A single crystal silicon wafer is selected as the substrate, and the resulting graphene-copper composite material is transferred. The specific transfer method is as follows: the surface of the silicon wafer is placed obliquely, and the gas-liquid interface formed between the copper-containing organic salt solution and the protective atmosphere side, gradually approaching the surface of the graphene-copper composite material formed at the gas-liquid interface, until the contact, the graphene-copper composite mate...

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Abstract

The present invention proposes a method for preparing graphene, comprising step 1, dissolving copper-containing organic salt in an organic solvent whose boiling point is higher than the decomposition temperature of the organic salt, and configuring it into a copper-containing graphene with a copper-containing concentration of 0.001-0.02mol / L Organic salt solution; place the prepared copper-containing organic salt solution in a protective atmosphere, heat it to 150-300°C under normal pressure, and heat it to the preset temperature for 15-120 minutes; the copper-containing organic salt solution decomposes to form copper Atoms and carbon atoms, copper and carbon intergrowth, at the gas-liquid interface between the copper-containing organic salt solution and the protective atmosphere, forming an area of ​​0.5cm 2 The above graphene-copper composite material, the composite material is composed of single crystal copper nanosheets and graphene; step 2, the graphene-copper composite material is transferred to the selected substrate surface; step 3, the graphite transferred to the substrate surface Graphene with less than 10 layers of carbon atoms is obtained by chemically separating ene-copper composites. The above method can effectively control the number of carbon atomic layers of graphene, and has the advantages of low cost and short preparation period.

Description

technical field [0001] The invention relates to the technical field of preparation of graphene materials, in particular to a method for preparing graphene at low temperature and normal pressure. Background technique [0002] Graphene is a carbon atom with sp 2 Orbital hybridization into bonds to form a honeycomb two-dimensional material has the characteristics of high electron mobility, high thermal conductivity, large specific surface area and good mechanical properties, which has attracted extensive attention of scientists in many fields such as physics, chemistry, and materials. However, during the preparation process of graphene, it is often necessary to provide reaction conditions of high temperature, high pressure or high temperature and high pressure to the system, which makes the preparation cost very high. Therefore, finding a simple, low-cost, and large-area graphene preparation method has become a difficulty in this field. [0003] CN201510334460 discloses a met...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/184
CPCC01B32/184C01B2204/04
Inventor 尹鹏飞李宇杰邹永兴张鹏
Owner HARBIN INST OF TECH AT WEIHAI