Hollow cathode discharge system and method for preparing diamond-like film
A hollow cathode discharge, diamond thin film technology, applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the problem of unfavorable high-efficiency deposition of diamond-like carbon film, reduction of plasma density, and unfavorable large-area deposition of diamond-like carbon film. and other problems, to achieve the effect of improving deposition area and deposition efficiency, optimizing surface characteristics and excellent hardness
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[0048] Example one
[0049] A hollow cathode discharge system was used to deposit the DLC film. The distance between the hollow cathode 30 and the anode 20 was 3 cm. The substrate was placed on the anode 20 and vacuumed to 10 -6 Torr, add argon gas to 10 Pa, turn on the cathode RF power supply 11 and the anode RF power supply 21 and anode DC power supply 23 on the anode 20, plasma clean the substrate for 10 minutes, after cleaning, vacuum again to 10 - 6 Torr, a mixed gas of argon and acetylene is introduced, the flow rate of argon is 400 sccm, and the flow rate of acetylene is 100 sccm. Adjust the pressure of the vacuum chamber to 10 Pa, start to deposit the DLC film, and the reaction time is 2 hours to obtain the substrate on which the DLC film is deposited. In this embodiment, the thickness D of the hollow cathode 30 is 20mm, the width S of the annular groove 31 is 5mm, the gap L between adjacent annular grooves 31 is 5mm, the depth of the annular groove 31 is 15mm, and the rad...
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[0050] Examples two to five
[0051] The other experimental conditions are equivalent to those of the first embodiment. The difference is that the radius R of the hollow cathode 30 is 60mm, 80mm, 120mm and 140mm, respectively. The physical and chemical properties of the substrate surface of the deposited DLC film obtained in each embodiment are tested. , The performance of the substrate of the DLC film of each embodiment is equivalent.
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