Crystal particle method and system

Abstract

The invention provides a crystal grain detection method and system for detecting crystal grains on a source wafer. The grain detection method comprises the following steps: electrically connecting a positive electrode and a negative electrode of each grain through a conductive material to form a closed loop; disposing a coil adjacent to the plurality of dies; inputting an alternating voltage to the coil to change the magnetic flux of the coil, generating an induced electromotive force by each closed loop according to the change of the magnetic flux, and enabling the peak value of the induced electromotive force to be higher than the breakover voltage of the crystal grain; and judging whether the crystal grains in each closed loop are conducted with induced current due to induced electromotive force or not.

Description

technical field [0001] The invention relates to a grain detection method and system, in particular to a grain detection method and system for detecting grains on a source wafer. Background technique [0002] The traditional wafer inspection method is to use a probe with a diameter of about 10 μm to contact the contacts on the die for electrical testing. When the dies are inspected to be flawless, subsequent processes such as dicing, sorting, and packaging are carried out. However, when the size of the crystal grain is as small as the size of the probe, such as micro LED, it is difficult to use the detection method of the prior art to conduct an electrical test on the crystal grain. [0003] Therefore, the micro-LEDs in the prior art usually transfer the dies to the panel through a micro transfer printing process after the dies are diced on the source wafer, and the die defect rate of the panel cannot be controlled. For this reason, the existing grain inspection methods are...

AI Technical Summary

Problems solved by technology

However, when the grain size is as small as the size of the probe, such as: micro LED (micro LED), it is difficult to use the detection method of the existing technology to conduct electrical tests on the grain

[0003] Therefore, micro-LEDs in the prior art usually transfer the dies to the panel through a micro transfer printing process after the dies are diced on the source wafer, and the die defect rate of the panel cannot be controlled.

For this reason, the existing grain detection methods are difficult to apply to small-scale grains, which makes detection of small-scale grains difficult, so the existing grain detection methods still have shortcomings and there is room for improvement

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