A method for manufacturing a semiconductor structure

Abstract

A method for manufacturing a semiconductor structure includes depositing a silicon layer, which includes first portions over a plurality of strips, and second portions filled into trenches between theplurality of strips. The plurality of strips protrudes higher than a base structure. The method further includes performing an anneal to allow parts of the first portions of the silicon layer to migrate toward lower parts of the plurality of trenches, and performing an etching on the silicon layer to remove some portions of the silicon layer.

Description

technical field [0001] Embodiments of the present disclosure relate to a semiconductor technology, and in particular to a method for manufacturing a semiconductor structure, so as to reduce gaps, holes and fin bending during gap filling. Background technique [0002] Technological advances in integrated circuit (IC) materials and design have resulted in generations of ICs, each with smaller and more complex circuits than the previous generation. Among IC advancement topics, functional density (ie, the number of interconnected devices per chip area) has generally increased while geometry size has shrunk. The shrinking process described above is beneficial due to increased production efficiency and reduced associated costs. [0003] The aforementioned scaling processes have also increased the complexity of IC processing and manufacturing, and in response to these advances, similar evolutions are required in IC processing and manufacturing. For example, Fin Field-Effect Trans...

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Problems solved by technology

[0003] The aforementioned scaling processes have also increased the complexity of IC processing and manufacturing, and in response to these advances, similar evolutions are required in IC processing and manufacturing

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