Heat dissipation type zener diode

Abstract

The invention discloses a heat dissipation type zener diode, comprising a heavily doped semiconductor substrate belonging to a first conductivity type, a first epitaxial layer belonging to the first conductivity type, a first heavily doped region belonging to a second conductivity type, a second epitaxial layer and a second heavily doped region belonging to the first conductivity type or the second conductivity type. The first epitaxial layer is disposed on the heavily doped semiconductor substrate, and the first heavily doped region is disposed in the first epitaxial layer and spaced from theheavily doped semiconductor substrate. The second epitaxial layer is arranged on the first epitaxial layer, and the second epitaxial layer has a first doped region penetrating through itself, the first doped region belongs to the second conductivity type, and the first doped region contacts the first heavily doped region. The second heavily doped region is disposed in the first doped region.

Description

technical field [0001] The present invention relates to a suppression device, and in particular to a heat dissipation Zener diode. Background technique [0002] When the size of integrated circuit components shrinks to the nanometer level, and some electronic products, such as notebook computers or mobile phones, are thinner, lighter and smaller than before, the ability to withstand ESD shocks is even lower. For these electronic products, if no proper ESD protection device is used for protection, the electronic products are easily impacted by ESD, which will cause the system restart of the electronic products, and even the hardware may be damaged and cannot be recovered. At present, all electronic products are required to pass the ESD test requirements of the IEC 61000-4-2 standard. For the ESD problem of electronic products, using a transient voltage suppressor (TVS) is a more effective solution, so that the ESD energy can be released quickly through the TVS, so as to avoi...

AI Technical Summary

Problems solved by technology

However, the second-type semiconductor layer is not deep enough in the first-type semiconductor layer

Therefore, the instantaneous electrostatic discharge current flowing through the Zener diode structure generates heat concentrated on the surface of the Zener diode structure, and this heat can easily cause damage to the Zener diode structure

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