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method for extracting TFT model parameters

A technology of model parameters and extraction methods, applied in electrical digital data processing, special data processing applications, instruments, etc., can solve the problems that the RPITFT model cannot meet the needs of designers for accurate and effective simulation verification and design, and cannot perform high-order current modeling. , to achieve the effect of narrowing the gap and improving the accuracy of the model

Active Publication Date: 2019-04-19
南京华大九天科技有限公司
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Problems solved by technology

In the face of today's TFT devices, although the traditional RPI TFT model is still in use, it can no longer correctly model many high-order current behaviors
[0003] Nowadays, as the design of flat-panel displays becomes more and more complex, the requirements for power consumption edge design are also getting higher and higher. Many current TFT devices have undergone technological innovations, and the traditional RPI TFT model is completely unable to meet the needs of designers for accurate and effective design. Simulation verification and design requirements

Method used

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Embodiment Construction

[0033] The preferred embodiments of the present invention will be described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.

[0034] figure 1 It is a flow chart of TFT model and model extraction method according to the present invention, as figure 1 Shown, TFT model of the present invention and model extraction method comprise:

[0035] First, in step 101, input measurement data is received and processed to generate an extraction circuit. In this step, open the extraction tool, read in the "measurement data", process the received current and capacitance measurement data, and measure the temperature according to the relevant TFT parameters: device size parameters W, L, process parameters Tox, dielectric constant EPSI and data , generating an extracted circuit that the extraction tool can ...

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Abstract

A method for extracting TFT model parameters comprises the following steps: receiving and processing measurement data, and generating an extraction circuit; selecting a TFT model type, dividing inputcurrent data into a plurality of current regions, and obtaining a current region model equation of each current region; predefining an error calculation scheme of the measurement data and the TFT model; calculating an initial value of a model parameter based on the current region model equation and the current data distribution; performing parameter optimization of the model, and calculating a relationship between the error data and the model result; and performing error checking. According to the method for extracting the TFT model parameters, circuit simulation can be accurately and effectively carried out on the panel design, and the design of the panel design can be verified.

Description

technical field [0001] The invention relates to the technical field of panel design, in particular to a method for extracting TFT model parameters. Background technique [0002] At present, the traditional RPI TFT model uses the terminal voltage of the device to calculate the current and capacitance, and is mainly used to describe large-size TFTs. It has been proposed and continued to be used for more than 30 years, and the model has not been further improved or innovated during this period. Facing today's TFT devices, although the traditional RPI TFT model is still in use, it can no longer correctly model many high-order current behaviors. [0003] Nowadays, as the design of flat-panel displays becomes more and more complex, the requirements for power consumption edge design are also getting higher and higher. Many current TFT devices have undergone technological innovations, and the traditional RPI TFT model is completely unable to meet the needs of designers for accurate ...

Claims

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Application Information

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IPC IPC(8): G06F17/50
CPCG06F30/398G06F30/20
Inventor 林世佳樊晓斌朱能勇黄琬琰朱艳
Owner 南京华大九天科技有限公司
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