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A kind of high thermal conductivity electronic packaging composite material and preparation method thereof

A technology of electronic packaging and composite materials, which is applied in the direction of nanotechnology, circuits, electrical components, etc. for materials and surface science, can solve the problems of decreased fluidity of packaging materials, reduce thermal expansion coefficient, increase glass transition temperature, and improve Effect of electromigration failure time

Active Publication Date: 2020-05-01
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the increase in the amount added will inevitably lead to a decrease in the fluidity of the packaging material

Method used

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  • A kind of high thermal conductivity electronic packaging composite material and preparation method thereof
  • A kind of high thermal conductivity electronic packaging composite material and preparation method thereof
  • A kind of high thermal conductivity electronic packaging composite material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] The high thermal conductivity electronic packaging composite material provided by the invention is used on the packaging filling of microelectronic chips, such as figure 1 As shown, the outer surface of the nano-copper particles 1 is covered with a silicon dioxide layer 2; the silicon dioxide layer 2 is used as an insulating layer, and its thickness is 10-100 nm; the particle size of the nano-copper particles is 50-500 nm. The nano-copper particles wrapped with the silicon dioxide layer 2 are mixed with the polymer 3 to form a high thermal conductivity electronic packaging composite material; wherein, the volume ratio of the insulating nano-particles to the polymer is 0.1-0.3. Polymers include epoxy, acrylate or phenolic resins.

[0038] Fill the electronic packaging composite material with high thermal conductivity between the chip 4 and the substrate 5, and also include the micro-bump 6 between the chip 4 and the substrate 5, the micro-bump 6 is the I / O connection bet...

Embodiment 2

[0041] Step 1: Weigh 2mmol copper oxalate and dissolve it in 25ml N,N-dimethylformamide solution;

[0042] Step 2: Add 1mmol polyvinylpolypyrrolidone and 1.3mmol sodium borohydride to the solution in step 1;

[0043] Step 3: After stirring for five minutes, the above mixture was heated to 85°C and kept for 3 minutes, and then filtered to obtain an orange precipitate, which is called filter residue A, and the filter residue A was washed several times with alcohol to obtain intermediate product A;

[0044]Step 4: Dissolving and dispersing the intermediate product A obtained in Step 3 in a mixed solution of 60ml of water and 40ml of ethanol to obtain a mixed solution;

[0045] Step 5: Add 1 mL of concentrated ammonia water to the mixed solution in step 4, and then add 0.24 mmol of ethyl orthosilicate; wherein, the concentration of ammonia water is 28% by mass;

[0046] Step 6: After stirring at room temperature for 6 hours, filter to obtain filter residue B, wash filter residue ...

Embodiment 3

[0054] Step 1: Weigh 3mmol copper oxalate and dissolve it in 50ml N,N-dimethylformamide solution;

[0055] Step 2: Add 1.6mmol polyvinylpolypyrrolidone and 1.8mmol sodium borohydride to the step 1 solution;

[0056] Step 3: After stirring for five minutes, the above mixture was heated to 90°C and kept for 4 minutes, and then filtered to obtain an orange precipitate, which is called filter residue A, and the filter residue A was washed several times with alcohol to obtain intermediate product A;

[0057] Step 4: Dissolving and dispersing the intermediate product A obtained in Step 3 in a mixed solution of 75ml of water and 75ml of ethanol to obtain a mixed solution;

[0058] Step 5: Add 3mL concentrated ammonia water to the mixed solution in step 4, and then add 0.3mmol tetraethyl orthosilicate; wherein, the mass percentage concentration of ammonia water is 26%;

[0059] Step 6: After stirring at room temperature for 7 hours, filter to obtain filter residue B, wash filter resi...

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Abstract

The invention provides a high thermal conductivity electronic packaging composite material and a preparation method thereof. The composite material is composed of insulating nanoparticles and polymers, and the volume ratio of the insulating nanoparticles to the polymer is 0.1-0.3; the insulating nanoparticles The particles are nano-copper particles coated with a silicon dioxide insulating layer, the thickness of the silicon dioxide insulating layer is 10-100 nm, and the particle diameter of the nano-copper particles is 50-500 nm. The preparation method includes firstly preparing insulating nano-copper particles, and then mixing insulating nano-copper particles with a polymer to prepare a high thermal conductivity electronic packaging composite material. The composite material provided by the invention can meet the thermal conductivity and fluidity requirements of packaging and filling while meeting the packaging and insulation requirements. The nanocomposite filling can significantly improve the heat dissipation performance of the device, reduce the thermal expansion coefficient, and increase the glass transition temperature. Electromigration failure time.

Description

technical field [0001] The invention relates to the technical field of electronic packaging materials, in particular to a high thermal conductivity electronic packaging composite material and a preparation method thereof. Background technique [0002] Since Moore's Law was proposed by Gordon Moore in 1965, it has been guiding the development of the world's semiconductor industry to lower costs, higher integration and greater economic benefits. As the feature sizes of microelectronic chip manufacturing approach physical limits, Moore's Law will no longer apply. However, this does not mean the end of progress. Multi-chip three-dimensional integrated packaging that does not rely on feature size reduction has the advantages of shortened interconnection, increased integration, additional new functions, and rapid market entry. Its processing speed, transmission rate, Increased storage capacity by 10 3 times, the volume is reduced to 1 / 1000, and three-dimensional integration will...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/29H01L23/373B22F1/02B22F9/22B82Y30/00
CPCH01L23/295H01L23/3737B82Y30/00B22F9/22B22F1/16H01L2224/73204
Inventor 李军辉金忠韩江何虎田青陈卓刘小鹤刘湛朱文辉
Owner CENT SOUTH UNIV