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display device

A technology for display devices and light conversion layers, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of different wavelengths of luminous intensity, reduction in the concentration of quantum dot materials, and weakening of the structure of the light conversion layer.

Active Publication Date: 2021-02-09
INNOLUX CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Generally speaking, particles with high reflectance are added to the light conversion layer in the form of uniform mixing with quantum dot materials. However, the addition of high-concentration particles with high reflectance will relatively reduce the concentration of quantum dot materials, which may cause light Structural weakening of the conversion layer
In addition, in a display array containing multiple pixels, there are often many variations between individual pixels, for example, the luminous intensity or wavelength of emitted light of LEDs in each pixel may be different, etc.

Method used

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Embodiment Construction

[0048] The structure and manufacturing method of the display device of the present disclosure will be described in detail below. It should be appreciated that the following description provides many different embodiments for implementing different aspects of some of the embodiments of the disclosure. The specific components and arrangements described below are only for simple and clear description of some embodiments of the present disclosure. Of course, these are only examples rather than limitations of the present disclosure. Repeated reference numerals or designations may be used in different embodiments. These repetitions are only for simply and clearly describing some embodiments of the present disclosure, and do not mean that there is any relationship between the different embodiments and / or structures discussed. Furthermore, when it is described that a first material layer is disposed on or over a second material layer, it includes the situation that the first materia...

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PUM

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Abstract

The present disclosure provides a display device, including: a plurality of pixels, and at least one pixel includes: a semiconductor device having a light emitting region; a first light conversion layer disposed on the semiconductor device; and a first scattering layer, It is arranged on the semiconductor device, wherein the first scattering layer is arranged on the first light conversion layer.

Description

technical field [0001] The present disclosure relates to a display device, in particular to a display device with a scattering layer. Background technique [0002] Electronic devices with display panels such as smartphones, tablets, laptops, monitors, and televisions have become an indispensable necessity in modern society. With the vigorous development of such portable electronic products, consumers have higher expectations for the quality, functions and prices of such products. [0003] Gallium Nitride (GaN) based Light Emitting Diodes (LEDs) are expected to be used in future efficient lighting applications, replacing incandescent and fluorescent lamps. GaN-based LED devices are usually fabricated on substrate materials by heteroepitaxial growth techniques. A typical wafer-level LED device structure may include an n-doped GaN underlayer and a p-doped GaN layer formed on a sapphire substrate, a single quantum well (SQW) or a multiple quantum well (MQW). upper layer. [...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/58
CPCH01L33/58
Inventor 林俊贤张耕辅柯瑞峰谢朝桦郭书铭
Owner INNOLUX CORP