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Substrate for diamond synthesis, temperature uniformity control device and synthesis equipment

A control device, diamond technology, applied in diamond and other directions, can solve problems such as uneven temperature of seed crystals, and achieve the effect of improving yield

Active Publication Date: 2022-05-27
CHANGSHA ADVANCED MATERIALS IND RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The present invention mainly aims at the problem of inhomogeneous temperature of individual seed crystals in the synthesis process, and proposes a substrate for diamond synthesis, a temperature uniformity control device and synthesis equipment to realize the control of local temperature, so as to improve the yield rate and reduce the purpose of cost

Method used

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  • Substrate for diamond synthesis, temperature uniformity control device and synthesis equipment
  • Substrate for diamond synthesis, temperature uniformity control device and synthesis equipment
  • Substrate for diamond synthesis, temperature uniformity control device and synthesis equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] figure 1 It is a schematic diagram of the structure of the substrate for diamond synthesis in the embodiment of the present invention.

[0044] figure 2 Yes figure 2 of figure 1 top view.

[0045] like figure 1 , 2 As shown, the substrate for diamond synthesis, which is used for placing the seed crystal 4 for diamond synthesis, includes a substrate base 2 and a thermal compensation unit composed of a plurality of thermal compensation components 5 .

[0046] The substrate base 2 has a contact surface 2 for placing the seed crystal on the upper part and a groove 2 arranged at the bottom, a cooling channel for the cooling medium to flow, and a plurality of mounting holes arranged in the base.

[0047] The processing requirements of the contact surface are relatively high, and it is a component that is directly in contact with the seed crystal for support, such as figure 2 As shown, contact surfaces may be processed on the entire upper surface of the base body ...

Embodiment 2

[0054] On the basis of the substrate for diamond synthesis provided in Embodiment 1, this embodiment also provides a temperature uniformity control device based on the novel substrate, which includes the substrate in Embodiment 1, a temperature measurement component, and a temperature control device. device.

[0055] The substrate is located on the substrate stage 1, and the heat conducting wire 3 is placed on the base plate stage, and the substrate is located on the heat conducting wire. Preferably, the heat conducting wire is molybdenum wire. The thermal wire separates the substrate base 2 from the substrate stage 1, such as figure 1 shown.

[0056] The temperature measurement component is used to measure the real-time temperature of the seed crystal, and the temperature measurement component is a non-contact temperature measurement device. Preferably, the temperature measurement component is a non-contact infrared thermometer 90 .

[0057] The temperature controller, acc...

Embodiment 3

[0063] like image 3 As shown, this embodiment provides an MPCVD synthesis equipment, including a control center 10, a signal processing center 20, a microwave power supply 30, a microwave generating device 40, a microwave transmission guiding device 50, a reflected microwave adjusting device (middle section) 60, and a mode converter. 70 . The reflected microwave adjusting device (the last section) 80 , the non-contact infrared thermometer 90 and the reaction cavity 100 .

[0064] The reaction chamber 100 of the apparatus uses the substrate for diamond synthesis in Example 1, and the specific substrate base 2 is set on the substrate stage 1 .

[0065] Or further, in order to better control the temperature, the device also has the temperature uniformity control device in the above-mentioned embodiment 2, the signal processing center 20 is connected with the temperature measurement component and the thermal compensation component wires, and the control center 10 is processed by ...

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Abstract

The substrate for diamond synthesis belongs to the technical field of artificial crystal synthesis equipment, including: a substrate base, with a contact surface for placing seed crystals; a thermal compensation unit, including a plurality of thermal compensation components arranged on the substrate base, and a thermal compensation component It is used for temperature regulation of the temperature of the contact surface. A temperature uniformity control device is also provided, including: a substrate; a temperature measurement component for measuring the real-time temperature of the seed crystal; a temperature controller for controlling the corresponding thermal compensation component according to the real-time temperature of the seed crystal measured by the temperature measurement component Work on thermal compensation adjustments. Synthesis equipment, the reaction chamber of the equipment uses the above-mentioned substrate for diamond synthesis; and / or, the equipment has the above-mentioned temperature uniformity control device. The thermal compensation component can correspond to each seed crystal, so that each seed crystal can be thermally compensated, so as to control the local temperature, and finally achieve the overall temperature uniformity, thereby significantly improving the yield of diamond.

Description

technical field [0001] The invention relates to the field of diamond synthesis, in particular to a substrate for diamond synthesis, a temperature uniformity control device and a synthesis system, and belongs to the technical field of artificial crystal synthesis equipment. Background technique [0002] Due to its excellent physical and chemical properties, diamond has attracted everyone's attention. But natural diamond reserves are limited, so people have developed a variety of synthetic diamond methods, such as high temperature and high pressure method (HPHT), hot wire chemical vapor deposition (HJCVD). Among them, the method of synthesizing diamond by microwave plasma chemical vapor deposition (Microwave plasma chemical vapor deposition) is a more suitable method because there is no introduction of impurities, and it can synthesize diamond with high quality and large area. [0003] The quality of diamond synthesized by MPCVD method is related to many factors, including ca...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/26
CPCC01B32/26
Inventor 黄翀彭国令
Owner CHANGSHA ADVANCED MATERIALS IND RES INST CO LTD
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