Method and device for determining initial light source through cooperative optimization of light source mask

Abstract

The embodiment of the invention discloses an initial light source determining method and device for source mask optimization. The method comprises the steps that an initial mask pattern is acquired, at least one test pattern related to the initial mask pattern is obtained according to a geometric feature of the initial mask pattern, a test light source corresponding to the test pattern is searchedin a target light source library, wherein the target light source library includes a correspondence relationship between the test pattern and the test light source, the test light source is an optimized light source corresponding to the test pattern, and according to the test parameters of the searched test light source, initial parameters of the initial light source can be determined. Compared with the prior art that an annular light source is used as the initial light source, the initial light source determined according to the test parameters of the test light source in the method is closer to an optimized optimal light source corresponding to the initial mask pattern, and therefore, based on the determined initial light source, the number of iterations of the source mask optimizationmethod can be reduced and the optimization efficiency is improved.

Description

technical field [0001] The present application relates to the field of semiconductors, in particular to a method and device for determining an initial light source for collaborative optimization of a light source mask. Background technique [0002] In the field of semiconductors, lithography is an important process in the production of integrated circuits. Specifically, the mask pattern on the reticle can be transferred to the object to be processed in a certain proportion through exposure. With the development of integrated circuits, the size of semiconductor devices is gradually reduced, and people's demand for enhanced lithography resolution and lithography process window (Process Window, PW) is becoming stronger and stronger. Among them, the lithography process window refers to the guarantee mask The range of exposure dose and defocus amount that the graphics can be correctly copied to the silicon wafer can contain three pieces of information: imaging accuracy, exposure ...

AI Technical Summary

Problems solved by technology

Among them, in order to take into account the initial mask pattern in all directions, the determined initial light source is usually an annular (Annular) light source, that is, the initial mask pattern and the annular light source are jointly optimized by using the SMO method, thereby increasing the lithography process window. , this optimization method often requires more iterative calculations, the amount of calculation is large, and the optimization efficiency is low

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