Semiconductor failure location test unit and failure location method thereof

Abstract

The invention discloses a semiconductor failure location test unit, which is a snake-comb structure in a metal layer. The bonding lines of the test unit are divided into first-type bonding lines and second-type bonding lines. The adjacent first-type bonding lines are connected through the second-type bonding lines. The first-type bonding lines are longer than the second-type bonding lines. The first-type bonding lines are arranged in a metal line I, the second-type bonding lines are arranged in a metal line II, and the metal layer I and the metal layer II are different metal layers. The invention also discloses a semiconductor failure location method. According to the semiconductor failure location test unit and the failure location method thereof of the invention, a semiconductor failurelocation test unit at a failure point (a hot spot) can be quickly and accurately grasped by using the existing failure location analysis instrument.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor failure location testing unit added to a fixed position of the wafer for process monitoring during wafer processing. The invention also relates to a method for semiconductor failure location by using the semiconductor failure location testing unit. Background technique [0002] With the reduction of the semiconductor process and the reduction of the operating voltage of low-power products, the short-circuit leakage current of the metal layer of the snake-comb testkey structure has also become very small. The 28nm process is at the microampere or even nanoampere level, which is not easy to be detected by conventional EMMI / OBIRCH / THERMAL and other testing instruments capture the hotspot; especially when this structure is placed on the metal 1 layer, since there are still various test structures under metal 1, such as SiGe and Poly local protrusions cause metal 1short,...

AI Technical Summary

Problems solved by technology

[0003] The conventional snake-comb testkey structure puts all metals on the same layer, and the interlaced structure is not conducive to intercepting separated areas with FIB

After a short circuit occurs, the entire area is actually connected together, and SEM-VC cannot be used to capture the failure location, which brings time-consuming and laborious challenges to FA failure location

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