Semiconductor element

Abstract

The invention discloses a semiconductor element, which comprises first gate lines, second gate lines and first bar-shaped contact structures. Each first gate line has a first long axis extending in afirst direction. The second gate lines are parallel to the first gate lines. Each first bar-shaped contact structure has a second long axis. The angle between each first long axis and the corresponding second long axis is essentially greater than 0 degrees and smaller than 90 degrees.

Description

technical field [0001] The present invention relates to a semiconductor element, and in particular to a semiconductor element with a gate contact structure. Background technique [0002] With the shrinking of the size of the integrated circuit and the increasing demand for its performance, the semiconductor elements in the integrated circuit need to have higher driving current, faster response speed and smaller critical size. In order to achieve the goal of shrinking the critical size and increasing the reaction speed, the fin field effect transistor (finfield effect transistor, referred to as FinFET) technology with multiple gate structures has been adopted to increase the unit area density of components, reduce power consumption and improve gate Ability to control channels. [0003] However, as the critical dimensions of FinFETs become smaller and smaller, the landing area of ​​the contact structure provided by the gate structure to the metal interconnection line also bec...

AI Technical Summary

Problems solved by technology

As a result, in the process of making the contact structure, the gap between the line width obtained by the after development inspection (ADI) and the line width obtained by the after etch inspection (AEI) continues to expand, which seriously affects the key point of the contact structure. The critical dimension uniformity (Critical Dimension Uniformity, CDU) is likely to cause the failure of the electrical connection between the contact structure and the gate, so that the yield of the component manufacturing process cannot be improved.

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