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Metal-insulating layer-metal capacitor and manufacturing method thereof

A technology of metal capacitors and manufacturing methods, applied in capacitors, electric solid devices, circuits, etc., can solve problems such as poor interface flatness and affecting the reliability of metal capacitors as a whole component

Pending Publication Date: 2021-09-14
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, during the formation of the bottom electrode, the columnar crystal structure is likely to be generated due to the deposition of the conductive material layer, resulting in poor flatness of the interface between the upper surface of the bottom electrode and the dielectric layer formed thereon, and thus May affect the reliability of the overall component (metal-insulator-metal capacitor)

Method used

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  • Metal-insulating layer-metal capacitor and manufacturing method thereof
  • Metal-insulating layer-metal capacitor and manufacturing method thereof
  • Metal-insulating layer-metal capacitor and manufacturing method thereof

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Embodiment Construction

[0026] This specification provides a metal-insulating layer-metal capacitor and its manufacturing method, which can improve the flatness of the interface between the electrode and the dielectric layer, and under the premise of taking into account the capacitance of the metal-insulating layer-metal capacitor, The purpose of improving the reliability of metal-insulator-metal capacitor components. In order to make the above-mentioned embodiments and other purposes, features and advantages of the present specification more comprehensible, a number of embodiments are specifically cited below and described in detail with the accompanying drawings.

[0027] However, it must be noted that these specific implementation cases and methods are not intended to limit the present invention. The invention can still be implemented with other features, elements, methods and parameters. The proposals of the preferred embodiments are only used to illustrate the technical features of the present ...

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Abstract

The invention discloses a metal-insulating layer-metal capacitor and a manufacturing method thereof. The metal-insulating layer-metal capacitor comprises a base material, a first metal layer, a deposition structure, a dielectric layer and a second metal layer. The first metal layer has a planarized surface. The deposition structure is over the first metal layer and at least a portion of the deposition structure extends into the planarized surface, and the first metal layer and the deposition structure have the same material. The dielectric layer is over the deposition structure. The second metal layer is located on the dielectric layer.

Description

technical field [0001] The invention relates to a semiconductor element and a manufacturing method thereof, in particular to a metal-insulator-metal (MIM) capacitor and a manufacturing method thereof. Background technique [0002] Metal-insulator-metal capacitors have been widely used in semiconductor integrated circuit manufacturing processes because of their technical advantages of providing non-loss, high-conductivity electrodes, suitable for high-speed applications, and low cost. For example, it can be applied in Dynamic Random Access Memory (DRAM) components, as a scalable storage node capacitor in embedded design, or embedded in RF analog devices (RFanalog device) among. [0003] A typical metal-insulator-metal capacitor includes a bottom electrode and an upper electrode, and a dielectric between the bottom electrode and the upper electrode, usually composed of a high dielectric constant (High-k) material. Floor. Its manufacturing method usually adopts multiple depo...

Claims

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Application Information

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IPC IPC(8): H01L49/02H01L23/64
CPCH01L28/40H01L23/642H01L28/84
Inventor 黄柏伟康峻维赖和裕张志圣
Owner UNITED MICROELECTRONICS CORP