Semiconductor power device dynamic test system based on thermal imaging technology, and method thereof

Abstract

The invention belongs to the technical field of the power semiconductor device test, and relates to a semiconductor power device dynamic test system based on thermal imaging technology. The test system comprises a test circuit board, a signal generator and an infrared thermal imager; the test circuit board for mounting a tested device T is connected with the signal generator, an observation windowof the infrared thermal imager is aligned with the tested device T and used for shooting and displaying a temperature distribution image of the tested device T in the test process; the semiconductorpower device dynamic test system can monitor the thermal distribution of any time point device in the test, the total transfer process of the current in the power device test process can be acquired by forming the thermal distribution images at different time points, thereby understanding all existent weak spots of the device; the test system can be applied to majority devices, is wide in applicability, and has important significance for improving the device design capacity and improving the product competition.

Description

technical field [0001] The invention relates to a dynamic test system and method for semiconductor power devices, in particular to a dynamic test system and method for semiconductor power devices based on thermal imaging technology, which is used to monitor the heating status of power devices during the test process, and belongs to power semiconductor Device testing technology field. Background technique [0002] The reliability of a power device is usually measured by the maximum energy that the device can absorb without failure. The maximum energy is limited by the structural parameters inside the power device, and the maximum energy is seriously affected by the electrothermal characteristics inside the device. For example, during the unclamped inductive switching (UIS) test of a power device, the current will converge towards the breakdown weak point with the lowest withstand voltage inside the device. When the current starts to converge, the temperature at the breakdown ...

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Problems solved by technology

For example, during the unclamped inductive switching (UIS) test of a power device, the current will converge towards the breakdown weak point with the lowest withstand voltage inside the device. When the current starts to converge, the temperature at the breakdown weak point will rise rapidly , since the withstand voltage of the power device will increase with the rise of temperature, the withstand voltage at the weak point of breakdown will increase. If the withstand voltage of the weak point of breakdown cannot exceed that of other positions, the device will be burned at the weak point of breakdown

If the current cannot be diverted from the weak point of breakdown with the lowest withstand voltage, the maximum energy that the device can absorb without failure will be greatly reduced, which is not conducive to the popularization and use of the device.

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