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TMR sensor, and preparation method and resistance value adjusting method thereof

An adjustment method and sensor technology, applied in instruments, measuring magnetic variables, measuring devices, etc., can solve the problems of resistance deviation of TMR sensing unit and increase the difficulty of sensor circuit operation, so as to reduce the difficulty of zero adjustment and expand the scope of application. Effect

Pending Publication Date: 2019-05-10
珠海多创科技有限公司
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  • Abstract
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AI Technical Summary

Problems solved by technology

A TMR sensor is generally composed of a bridge circuit composed of 2 or 4 TMR sensing units. In actual production, one or more MTJ units in the MTJ array occasionally have a short-circuit conduction phenomenon, which causes the TMR sensing unit There is a deviation in resistance value between them, and the resistance value difference is usually an integer multiple of the resistance value of a single MTJ unit, which increases the difficulty of the operation of zeroing the sensor circuit in the later stage

Method used

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  • TMR sensor, and preparation method and resistance value adjusting method thereof
  • TMR sensor, and preparation method and resistance value adjusting method thereof
  • TMR sensor, and preparation method and resistance value adjusting method thereof

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Embodiment Construction

[0028] In order to make the above and other objects, features and advantages of the present invention more apparent, the following specifically cites the embodiments of the present invention, together with the accompanying drawings, for a detailed description as follows.

[0029] like figure 1 As shown, the TMR sensor of this embodiment includes an MTJ array disposed on an insulating substrate (not shown), connecting electrodes 2 , adjusting electrodes and peripheral circuits (not shown). The MTJ array is composed of a plurality of MTJ units 1, and the MTJ units 1 are arranged in the form of M rows×N columns to form an array ( figure 2 ), M and N are integers greater than zero. like image 3 As shown, one MTJ unit 1 includes two MTJ structures 1-1 connected in series, and the MTJ structures 1-1 in this embodiment are connected in series through the bottom electrode grown directly on the insulating substrate. MTJ structure 1-1 is a conventional structure, such as Figure 4...

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Abstract

The invention discloses a TMR sensor. The sensor comprises an insulating substrate, an MTJ array arranged on the insulating substrate and composed of MXN MTJ units arranged at intervals; connecting electrodes used for connecting the two adjacent MTJ units located in the same row in the MTJ array in series and connecting a row of the MTJ units and the next row of the MTJ units in the MTJ array in series, and adjusting electrodes led out from the multiple connecting electrodes. The adjacent MTJ units in each row in the array and the adjacent rows of the MTJ units are connected in series throughthe connecting electrodes, and the adjusting electrodes are led out from one or more connecting electrodes; the number of the MTJ units connected in series can be selected by selecting different adjusting electrodes as input ends and output ends; and the resistance value can be adjusted through short circuiting of the certain adjusting electrodes, so that the zero point adjustment of a circuit canbe realized.

Description

technical field [0001] The invention relates to a magnetic field detection sensor, in particular to a TMR sensor with an adjustable number in series, a preparation method thereof, and a resistance value adjustment method of the TMR sensor. Background technique [0002] A magnetic sensor is a sensor that can detect the direction, strength, and position of a magnetic field, and has been widely used in many fields. TMR (Tunnel Magnetoresistance, Tunnel Magnetoresistance) sensor is a kind of magnetic sensor. Due to its advantages of low offset, high sensitivity and good temperature performance, it has been gradually applied in the industrial field in recent years. The magnetoresistance of the TMR sensor will change with the magnitude and direction of the applied magnetic field, and its sensitivity is better than that of the Hall effect sensor, AMR (Anisotropy Magnetoresistance, anisotropic magnetoresistance) sensor and GMR (Giant Magnetoresistance, giant magnetoresistance) type ...

Claims

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Application Information

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IPC IPC(8): G01R33/10
Inventor 刘明胡忠强关蒙萌苏玮段君宝朱家训
Owner 珠海多创科技有限公司
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